Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes

Jeon, Joon-Woo; Park, Seong-Han; Jung, Se-Yeon; Lee, Sang Youl; Moon, Jihyung; Song, June-O; Seong, Tae-Yeon

doi:doi:10.1063/1.3484152

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Electron spin resonance of Zn_1−xMg_xO thin films grown by plasma-assisted molecular beam epitaxy

Zn1−xMgxO thin films with a Mg content x between 0 and 0.42 grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates were investigated by electron spin resonance at 5 K. Above band gap illumination induces a persistent resonance signal, which is attributed to free conduction band electrons. The g-factors of the Zn1−xMgxO epitaxial layers and their anisotropy were determined experimentally and an increase from g∥ = 1.957 for x = 0 to g∥ = 1.970 for x = 0.42 was found, accom...

Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes

III-nitride resonant tunneling diodes (RTDs), consisting Al0.2Ga0.8N/GaN double-barrier (DB) active layers, were grown on c-plane lateral epitaxial overgrowth (LEO) GaN/sapphire and c-plane freestanding (FS) GaN. RTDs on both templates, fabricated into mesa diameters ranging from 5 to 35 μm, showed negative differential resistance (NDR) at room temperature. NDR characteristics (voltage and current density at NDR onset and current-peak-to-valley ratio) were analyzed and reported as a function of...

We report on the formation of low-resistance Ohmic contacts to N-face n-GaN for high-power vertical light-emitting diodes using an Al–Ga solid solution (50 nm)/Ti(30 nm)/Al(200 nm) scheme and compare them with Ti(30 nm)/Al(200 nm) contacts. The Al–Ga solid solution layer is introduced to minimize the formation of Ga vacancies near the N-face n-GaN surface. It is shown that, unlike the Ti/Al contacts, the Al–Ga solid solution/Ti/Al contacts exhibit Ohmic behavior with a resistivity of 4.1×10⁻⁴ Ω cm², even after annealing at 250 °C. X-ray photoemission spectroscopy and secondary ion mass spectrometry examinations are performed to understand the temperature dependence of the electrical properties.

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KEYWORDS and PACS

Keywords

aluminium, aluminium alloys, annealing, electrical resistivity, gallium alloys, gallium compounds, III-V semiconductors, light emitting diodes, ohmic contacts, secondary ion mass spectra, solid solutions, titanium, vacancies (crystal), wide band gap semiconductors, X-ray photoelectron spectra

PACS

81.05.Ea

III-V semiconductors
81.40.Gh

Other heat and thermomechanical treatments
85.60.Jb

Light-emitting devices
79.60.Jv

Interfaces; heterostructures; nanostructures
79.20.Rf

Atomic, molecular, and ion beam impact and interactions with surfaces
73.40.Ns

Metal-nonmetal contacts

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http://dx.doi.org/10.1063/1.3484152

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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