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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092104 (2010); http://dx.doi.org/10.1063/1.3484280 (3 pages)

Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes

C. Bayram, Z. Vashaei, and M. Razeghi

Department of Electrical Engineering and Computer Science, Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208, USA

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(Received 19 July 2010; accepted 10 August 2010; published online 31 August 2010)

III-nitride resonant tunneling diodes (RTDs), consisting Al0.2Ga0.8N/GaN double-barrier (DB) active layers, were grown on c-plane lateral epitaxial overgrowth (LEO) GaN/sapphire and c-plane freestanding (FS) GaN. RTDs on both templates, fabricated into mesa diameters ranging from 5 to 35 μm, showed negative differential resistance (NDR) at room temperature. NDR characteristics (voltage and current density at NDR onset and current-peak-to-valley ratio) were analyzed and reported as a function of device size and substrate choice. Our results show that LEO RTDs perform as well as FS ones and DB active layer design and quality have been the bottlenecks in III-nitride RTDs.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, current density, epitaxial growth, gallium compounds, III-V semiconductors, negative resistance, quantum interference devices, resonant tunnelling diodes, Schottky barriers, wide band gap semiconductors

PACS

  • 85.30.Kk

    Junction diodes

  • 85.30.Mn

    Junction breakdown and tunneling devices (including resonance tunneling devices)

  • 85.35.Ds

    Quantum interference devices

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3484280

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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