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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092105 (2010); http://dx.doi.org/10.1063/1.3485056 (3 pages)

Solvent-mediated threshold voltage shift in solution-processed transparent oxide thin-film transistors

Yong-Hoon Kim1, Hyun Soo Kim1, Jeong-In Han2, and Sung Kyu Park3

1Flexible Display Research Center, Korea Electronics Technology Institute, Seongnam, Gyeonggi 463-816, Republic of Korea
2Department of Chemical and Biochemical Engineering, Dongguk University-Seoul, Seoul 100-715, Republic of Korea
3Department of Textile Engineering, Convergence Materials and Devices Laboratory, Chonbuk National University, Jeonju 561-756, Republic of Korea

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(Received 20 July 2010; accepted 11 August 2010; published online 31 August 2010)

We investigated solvent-mediated threshold voltage (VTH) shift in solution-processed zinc–tin oxide (ZTO) thin film transistors (TFTs). The ZTO TFTs showed negative VTH shift when exposed to various organic solvents such as hexane, isopropanol, and chlorobenzene. Additionally the magnitude of the shift showed a close relationship with the dielectric constant or electronegativity of the solvent molecules. From the experiments, one of the origins of the VTH shift in the transparent oxide TFTs appears to be closely correlated with the dipole interaction of the solvent molecules and ZTO back channel surface.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electronegativity, II-VI semiconductors, permittivity, solvent effects, thin film transistors, tin compounds, zinc compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3485056

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. Park, I. Song, S. Kim, S. Kim, C. Kim, J. Lee, H. Lee, E. Lee, H. Yin, K. K. Kim, K. W. Kwon, and Y. Park, Appl. Phys. Lett. 93, 053501 (2008)APPLAB000093000005053501000001.

    M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J. S. Park, J. K. Jeong, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett. 90, 212114 (2007)APPLAB000090000021212114000001.

    J. S. Park, J. K. Jeong, H. J. Chung, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett. 92, 072104 (2008)APPLAB000092000007072104000001.

    E. Chong, K. C. Jo, and S. Y. Lee, Appl. Phys. Lett. 96, 152102 (2010)APPLAB000096000015152102000001.

    R. B. M. Cross and M. M. De Souza, Appl. Phys. Lett. 89, 263513 (2006)APPLAB000089000026263513000001.

    Y. Vygranenko, K. Wang, and A. Nathan, Appl. Phys. Lett. 91, 263508 (2007)APPLAB000091000026263508000001.

    J. K. Jeong, H. W. Yang, J. H. Jeong, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett. 93, 123508 (2008)APPLAB000093000012123508000001.

    J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, and C. J. Kim, Appl. Phys. Lett. 93, 033513 (2008)APPLAB000093000003033513000001.


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