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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092106 (2010); http://dx.doi.org/10.1063/1.3485670 (3 pages)

Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxide

Jian Sun and Hao Gong

Department of Material Science and Engineering, National University of Singapore, Singapore 117543

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(Received 5 June 2010; accepted 9 July 2010; published online 1 September 2010)

The phenomenon of insulator-metal transition introduced in amorphous binary gallium oxide as discussed by Nagarajan et al. [Nature Mater. 7, 391 (2008)] is demonstrated to be also achievable in an amorphous ternary metal oxide system. The annealing method used in amorphous binary gallium oxide is not applicable to the ternary system. A different approach, aluminum incorporation in amorphous indium zinc oxide (IZO), is adopted in achieving insulator-metal transition or sharp resistance decrease in the amorphous ternary oxide. In addition to sharp resistance decrease, some other unexpected phenomena, such as different partial crystallization, are also reported.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium, amorphous state, annealing, crystallisation, doping profiles, electrical resistivity, indium compounds, metal-insulator transition, zinc compounds

PACS

  • 72.60.+g

    Mixed conductivity and conductivity transitions

  • 71.30.+h

    Metal-insulator transitions and other electronic transitions

  • 61.72.up

    Other materials

  • 81.40.Ef

    Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

  • 81.40.Gh

    Other heat and thermomechanical treatments

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3485670

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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