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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092108 (2010); http://dx.doi.org/10.1063/1.3485062 (3 pages)

Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors

Mincheol Shin

Department of Electrical Engineering, KAIST, Daejeon 305-701, Republic of Korea

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(Received 3 July 2010; accepted 12 August 2010; published online 1 September 2010)

Device performance of p-type nanowire Schotty barrier metal-oxide-semiconductor field-effect transistors is investigated focusing on the channel orientation effects. A rigorous quantum-mechanical calculation of hole current based on the multiband k⋅p method is carried out. The [111] oriented devices show the most superior performance, in terms of subthreshold slope, threshold voltage variation, and on-current. In particular, on-current in the [111] oriented devices is about twice as large as that in the [100] oriented devices. Tunneling effective mass, quantization energy, and Schottky barrier thickness are examined as the major factors that influence on the orientation-dependent current injection into the channel.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

MOSFET, nanowires, Schottky barriers, tunnelling

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3485062

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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