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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092109 (2010); http://dx.doi.org/10.1063/1.3485216 (3 pages)

Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence

J. A. Giesecke, M. C. Schubert, D. Walter, and W. Warta

Fraunhofer Institut für Solare Energiesysteme, Heidenhofstr. 2, 79110 Freiburg, Germany

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(Received 7 May 2010; accepted 12 August 2010; published online 1 September 2010)

Based on quasi-steady-state photoluminescence, we present an approach to extract minority carrier lifetime from silicon wafers without a priori information about any material parameter (e.g., dopant concentration or mobility). A sinusoidal oscillation of irradiation of a silicon sample in time stimulates a likewise oscillating excess carrier density. Our approach is based on the fact that—in the quasi-steady-state regime—the time shift between the maxima of irradiation intensity and the intensity of radiative recombination is linked to effective minority carrier lifetime. Exploiting the continuity equation, it is possible to determine injection dependent minority carrier lifetime from there.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier density, carrier lifetime, elemental semiconductors, minority carriers, photoluminescence, silicon

PACS

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 78.55.Ap

    Elemental semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3485216

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    T. Trupke, R. A. Bardos, M. C. Schubert, and W. Warta, Appl. Phys. Lett. 89, 044107 (2006)APPLAB000089000004044107000001.

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    P. P. Altermatt, F. Geelhaar, T. Trupke, X. Dai, A. Neisser, and E. Daub, Appl. Phys. Lett. 88, 261901 (2006)APPLAB000088000026261901000001.

    J. A. Giesecke, M. Kasemann, and W. Warta, J. Appl. Phys. 106, 014907 (2009)JAPIAU000106000001014907000001.


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