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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092110 (2010); http://dx.doi.org/10.1063/1.3483757 (3 pages)

Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer

J. F. Chen1, Ross C. C. Chen1, C. H. Chiang1, Y. F. Chen1, Y. H. Wu2, and L. Chang2

1Department of Electrophysics, National Chiao Tung University, Hsinchu 30050, Taiwan
2Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan

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(Received 2 June 2010; accepted 7 August 2010; published online 2 September 2010)

Capping InAs quantum dots (QDs) with an InGaAs layer allows strain relaxation to induce a low-energy electron state below a set of fine dot family states, which is consistent with photoluminescence (PL) spectra. The evolution of InAs thickness suggests a bimodal onset relaxation, i.e., a fine dot family that is strain-relieved by indium outdiffusion from the QDs, as suggested by transmission electron microscopy, and a low-energy dot family that is strain relaxed by the generation of lattice misfits. The indium outdiffusion can explain an abnormal PL blueshift in 70 meV in the fine dot family at onset of strain relaxation.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

dislocations, gallium arsenide, III-V semiconductors, indium compounds, photoluminescence, semiconductor quantum dots, transmission electron microscopy

PACS

  • 78.67.Hc

    Quantum dots

  • 73.21.La

    Quantum dots

  • 78.55.Cr

    III-V semiconductors

  • 68.65.Hb

    Quantum dots (patterned in quantum wells)

  • 61.72.Ff

    Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3483757

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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