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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092111 (2010); http://dx.doi.org/10.1063/1.3483760 (3 pages)

Coevaporation of Cu2ZnSnSe4 thin films

Alex Redinger and Susanne Siebentritt

Laboratoire de photovoltaique, Université du Luxembourg, 41, rue du Brill, L-4422 Belvaux, Luxembourg

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(Received 1 June 2010; accepted 1 August 2010; published online 2 September 2010)

Cu2ZnSnSe4 thin films grown by coevaporation are investigated in a wide temperature range and for different Se partial pressures during growth. At temperatures higher than 350 °C Sn is re-evaporating as SnSe from the surface whereas Zn is lost at temperatures higher than 430 °C. Moreover the Se partial pressure dramatically changes the Zn and Sn concentrations in the resulting film. Interrupted processes at 380 °C show that single-stage coevaporation intrinsically induces a secondary phase at the substrate/film interface.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

copper compounds, evaporation, II-VI semiconductors, semiconductor growth, semiconductor thin films, tin compounds, vacuum deposition, wide band gap semiconductors, zinc compounds

PACS

  • 68.55.ag

    Semiconductors

  • 81.15.Dj

    E-beam and hot filament evaporation deposition

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3483760

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. Chen, X. Gong, A. Walsh, and S. Wei, Appl. Phys. Lett. 96, 021902 (2010)APPLAB000096000002021902000001.

    A. Weber, R. Mainz, and H. W. Schock, J. Appl. Phys. 107, 013516 (2010)JAPIAU000107000001013516000001.


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