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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092112 (2010); http://dx.doi.org/10.1063/1.3486482 (3 pages)

A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics

B. G. Mendis, L. Bowen, and Q. Z. Jiang

Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom

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(Received 22 June 2010; accepted 17 August 2010; published online 2 September 2010)

A cathodoluminescence-based, contactless method for extracting the bulk minority carrier diffusion length and reduced recombination velocity of an individual grain boundary is applied to vapor grown CdTe epitaxial films. The measured diffusion length was within the range of 0.4–0.6 μm and the grain boundary recombination velocity varied from 500 to 750 cm/s. The technique can be used to investigate the effect of grain boundaries on photovoltaic performance.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

cadmium compounds, carrier lifetime, cathodoluminescence, grain boundaries, II-VI semiconductors, minority carriers, semiconductor epitaxial layers, solar cells, tellurium compounds, vapour phase epitaxial growth

PACS

  • 88.40.jm

    Thin film III-V and II-VI based solar cells

  • 88.40.H-

    Solar cells (photovoltaics)

  • 81.15.Kk

    Vapor phase epitaxy; growth from vapor phase

  • 68.55.ag

    Semiconductors

  • 73.50.Gr

    Charge carriers: generation, recombination, lifetime, trapping, mean free paths

  • 61.72.Mm

    Grain and twin boundaries

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3486482

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    C. Donolato, J. Appl. Phys. 54, 1314 (1983)JAPIAU000054000003001314000001.

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