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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092113 (2010); http://dx.doi.org/10.1063/1.3481801 (3 pages)

Effect of interfacial reactions between atomic-layer-deposited HfO2 films and n-GaAs (100) substrate using postnitridation with NH3 vapor

C. Y. Kim1, Y. S. Kang1, S. Y. Lee1, M.-H. Cho1, K. B. Chung2, H. Kim3, S. Na3, H. J. Lee3, and H. J. Yun4

1Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
2Department of Physics, Dankook University, Cheonan 330-714, Republic of Korea
3School of Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
4Analysis and Research Division, Korea Basic Science Institute (KBSI), Jeonju 561-756, Republic of Korea

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(Received 8 June 2010; accepted 3 August 2010; published online 2 September 2010)

Using a variety of various physical measurements, the effects of postnitridation annealing using NH3 vapor on the interface between atomic-layer-deposited HfO2 films and n-GaAs (100) substrates were investigated. After the nitridation treatment, from x-ray absorption spectroscopy and high resolution x-ray photoemission spectroscopy data indicate that the incorporation of Ga oxides into HfO2 films was significantly suppressed during the annealing treatment, primarily because of chemical reactions at the interface between Ga2O3 and NH3. Microstructural analyses further confirmed that the HfO2 film was fully crystallized and a thin GaOxNy layer had been formed at the HfO2/GaAs interface during the annealing process. Compared with the energy band alignments before and after the annealing process, the valence band offsets and energy band gaps were not changed substantially, because the interfacial nitride layer effectively blocked the diffusion of Ga oxide into the film.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, atomic layer deposition, dielectric thin films, gallium arsenide, hafnium compounds, III-V semiconductors, interface phenomena, nitridation, substrates, X-ray absorption spectra, X-ray photoelectron spectra

PACS

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 81.40.Gh

    Other heat and thermomechanical treatments

  • 78.70.Dm

    X-ray absorption spectra

  • 79.60.Jv

    Interfaces; heterostructures; nanostructures

  • 68.55.at

    Other materials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3481801

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    H. -S. Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, J. C. Lee, P. Majhi, N. Goel, W. Tsai, C. K. Gaspe, and M. B. Santos, Appl. Phys. Lett. 93, 062111 (2008)APPLAB000093000006062111000001.

    H. -S. Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, and J. C. Lee, Appl. Phys. Lett. 92, 032907 (2008)APPLAB000092000003032907000001.

    C. Y. Kim, S. W. Cho, M. -H. Cho, K. B. Chung, C. -H. An, H. Kim, H. J. Lee, and D. -H. Ko, Appl. Phys. Lett. 93, 192902 (2008)APPLAB000093000019192902000001.

    C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 92, 071901 (2008)APPLAB000092000007071901000001.

    C. Y. Kim, S. W. Cho, M. -H. Cho, K. B. Chung, D. C. Suh, D. -H. Ko, C. -H. An, H. Kim, and H. J. Lee, Appl. Phys. Lett. 95, 042903 (2009)APPLAB000095000004042903000001.

    K. B. Chung, J. P. Long, H. Seo, G. Lucovsky, and D. Nordlund, J. Appl. Phys. 106, 074102 (2009)JAPIAU000106000007074102000001.

    S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Yamashita, M. Niwa, K. Usuda, and G. L. Liu, J. Appl. Phys. 97, 104507 (2005)JAPIAU000097000010104507000001.


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