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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092114 (2010); http://dx.doi.org/10.1063/1.3486122 (3 pages)

Multiple-level threshold switching behavior of In2Se3 confined in a nanostructured silicon substrate

Jae Young Lee1, Ke Sun1, Biyun Li1, Ya-Hong Xie1, Xinyu Wei2, and Thomas P. Russell2

1Materials Science and Engineering, University of California, Los Angeles, California 90095-1595, USA
2Polymer Science and Engineering, University of Massachusetts Amherst, 120 Governor’s Drive, Amherst, Massachusetts 01003, USA

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(Received 22 January 2010; accepted 23 July 2010; published online 3 September 2010)

We report the experimental observation of an intriguing behavior of multiple-level threshold switching of Si–In2Se3 heterojunction devices consisting of high-density arrays of sharp points of nanometer radius of curvature. Comparison with devices of similar junction area but without the sharp points shows that the multiple-level switching behavior is unique to devices with junctions consisting of sharp points.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

elemental semiconductors, indium compounds, nanostructured materials, semiconductor heterojunctions, silicon, substrates

PACS

  • 73.40.Lq

    Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 71.20.Mq

    Elemental semiconductors

  • 73.63.Bd

    Nanocrystalline materials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3486122

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968).

    D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, J. Appl. Phys. 51, 3289 (1980)JAPIAU000051000006003289000001.

    Y. Zhang, H. -S. P. Wong, S. Raoux, J. N. Cha, C. T. Rettner, L. E. Krupp, T. Topuria, D. J. Milliron, P. M. Rice, and J. L. Jordan-Sweet, Appl. Phys. Lett. 91, 013104 2007APPLAB000091000001013104000001.


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