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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092115 (2010); http://dx.doi.org/10.1063/1.3486178 (3 pages)

Conductivity of a graphene strip: Width and gate-voltage dependencies

F. T. Vasko1 and I. V. Zozoulenko2

1Institute of Semiconductor Physics, NAS of Ukraine, Pr. Nauki 41, Kiev 03028, Ukraine
2Solid State Electronics, ITN, Linköping University, 601 74 Norrköping, Sweden

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(Received 2 July 2010; accepted 16 August 2010; published online 3 September 2010)

We study the conductivity of a graphene strip taking into account electrostatically induced charge accumulation on its edges. Using a local dependency of the conductivity on the carrier concentration we find that the electrostatic size effect in doped graphene strip of the width of 0.5–3 μm can result in a significant (about 40%) enhancement of the effective conductivity in comparison to the infinitely wide samples. This effect should be taken into account both in the device simulation as well as for verification of scattering mechanisms in graphene.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier density, electrostatics, graphene

PACS

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 72.80.Vp

    Electronic transport in graphene

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3486178

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, Rev. Mod. Phys. 81, 109 (2009).

    P. G. Silvestrov and K. B. Efetov, Phys. Rev. B 77, 155436 (2008), A. A. Shylau, J. W. Klos, and I. V. Zozoulenko, ibid. 80, 205402 (2009).

    N. M. R. Peres, J. M. B. Lopes dos Santos, and T. Stauber, Phys. Rev. B 76, 073412 (2007), T. Stauber, N. M. R. Peres, and F. Guinea, ibid. 76, 205423 (2007).

    F. T. Vasko and V. Ryzhii, Phys. Rev. B 76, 233404 (2007), J. W. Klos and I. V. Zozoulenko, Phys. Rev. B 82, 081414 (2010).

    Y. -W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, Phys. Rev. Lett. 99, 246803 (2007), C. Jang, S. Adam, J. -H. Chen, E. D. Williams, S. Das Sarma, and M. S. Fuhrer, ibid. 101, 146805 (2008).

    X. Hong, K. Zou, and J. Zhu, Phys. Rev. B 80, 241415 (2009), W. Zhu, V. Perebeinos, M. Freitag, and Ph. Avouris, ibid. 80, 235402 (2009).

    L. A. Ponomarenko, R. Yang, T. M. Mohiuddin, M. I. Katsnelson, K. S. Novoselov, S. V. Morozov, A. A. Zhukov, F. Schedin, E. W. Hill, and A. K. Geim, Phys. Rev. Lett. 102, 206603 (2009).


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