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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092116 (2010); http://dx.doi.org/10.1063/1.3486227 (3 pages)

Orientation-dependent charge carrier confinement in a nanopatterned silicon film

Zheng Liu1, Wenhui Duan2, Bing-Lin Gu2, and Jian Wu2

1Institute for Advanced Study, Tsinghua University, Beijing 100084, People's Republic of China
2Department of Physics, Key Laboratory of Atomic and Molecular Nanosciences, Tsinghua University, Beijing 100084, People's Republic of China

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(Received 12 May 2010; accepted 16 August 2010; published online 3 September 2010)

From first-principles calculations, we find that in a (110) Si film with surface etching along the [001] direction, the holes can be confined underneath the patterned layer. This effect arises from the interplay between the anisotropic carriers and the patterning-induced quantum confinement. An anisotropy coefficient K = mz/my, which is the ratio between the out-of-plane effective mass and the in-plane effective mass of the charge carriers in the film, is introduced to explain the orientation dependence. We propose that a modulation-dopinglike effect can be achieved in the (110) nanopatterned Si film by selective doping in the top patterned layer.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

ab initio calculations, effective mass, elemental semiconductors, etching, nanopatterning, semiconductor doping, semiconductor thin films, silicon

PACS

  • 73.61.Cw

    Elemental semiconductors

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 81.16.Rf

    Micro- and nanoscale pattern formation

  • 81.65.Cf

    Surface cleaning, etching, patterning

  • 71.18.+y

    Fermi surface: calculations and measurements; effective mass, g factor

  • 61.72.uf

    Ge and Si

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3486227

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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