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Applied Physics Letters / Volume 97 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 97, 092117 (2010); http://dx.doi.org/10.1063/1.3486473 (3 pages)

High power terahertz emission from a single gate AlGaN/GaN field effect transistor with periodic Ohmic contacts for plasmon coupling

Toshikazu Onishi, Tatsuya Tanigawa, and Shinichi Takigawa

Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo-City, Kyoto 617-8520, Japan

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(Received 24 May 2010; accepted 8 August 2010; published online 3 September 2010)

We report on room temperature terahertz (THz) emission by a single, short gate AlGaN/GaN field effect transistor with grating Ohmic contacts. The fingers of metal contacts are fabricated at the nanoscale in length and spacing in order to work as a radiation coupler of electron plasmons in the THz range. Spectrum analysis revealed a broadband emission centered at 1.5 THz with a controlled polarization by the grating contacts. The measured output power is linearly increased with the drain input power and reached up to 1.8 μW.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, high electron mobility transistors, III-V semiconductors, ohmic contacts, semiconductor heterojunctions, surface plasmon resonance, terahertz wave spectra, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3486473

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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