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Appl. Phys. Lett. 97, 092118 (2010); http://dx.doi.org/10.1063/1.3485050 (3 pages)

Bi1−xSrxCuSeO oxyselenides as promising thermoelectric materials

L. D. Zhao1,2, D. Berardan1,2, Y. L. Pei3, C. Byl1,2, L. Pinsard-Gaudart1,2, and N. Dragoe1,2

1Institut de Chimie Moléculaire et des Matériaux d’Orsay, Univ. Paris-Sud, UMR 8182, Orsay F-91405, France
2CNRS, Orsay F-91405, France
3School of Materials Science and Engineering, Beihang University, Beijing 100191, People's Republic of China

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(Received 4 July 2010; accepted 11 August 2010; published online 3 September 2010)

p-type BiCuSeO, a layered oxyselenide composed of conductive (Cu2Se2)2− layers alternately stacked with insulating (Bi2O2)2+ layers, shows an enhancement of the electrical conductivity after substituting Bi3+ by Sr2+, from 470 S m−1 (BiCuSeO) to 4.8×104 S m−1 (Bi0.85Sr0.15CuSeO) at 293 K. Coupled to high Seebeck coefficients, this leads to promising values of the thermoelectric power factor that exceeds 500 μW m−1 K−2 at 873 K. Moreover, the thermal conductivity of these layered compounds is lower than 1 W m−1 K−1 at 873 K. Maximum ZT values reach 0.76 at 873 K, making this family promising for thermoelectric applications in the medium temperature range.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 72.20.Pa

    Thermoelectric and thermomagnetic effects

  • 66.70.-f

    Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    M. L. Liu, F. Q. Huang, L. D. Chen, and I. W. Chen, Appl. Phys. Lett. 94, 202103 (2009)APPLAB000094000020202103000001.

    X. Y. Shi, F. Q. Huang, M. L. Liu, and L. D. Chen, Appl. Phys. Lett. 94, 122103 (2009)APPLAB000094000012122103000001.

    W. J. Xie, X. F. Tang, Y. G. Yan, Q. J. Zhang, and T. M. Tritt, Appl. Phys. Lett. 94, 102111 (2009)APPLAB000094000010102111000001.

    H. Li, X. F. Tang, Q. J. Zhang, and C. Uher, Appl. Phys. Lett. 94, 102114 (2009)APPLAB000094000010102114000001.

    L. D. Hicks and M. S. Dresselhaus, Phys. Rev. B 47, 12727 (1993).

    J. L. Lan, Y. H. Lin, G. J. Li, S. L. Xu, Y. Liu, C. W. Nan, and S. J. Zhao, Appl. Phys. Lett. 96, 192104 (2010)APPLAB000096000019192104000001.

    X. B. Zhao, X. H. Ji, Y. H. Zhang, T. J. Zhu, J. P. Tu, and X. B. Zhang, Appl. Phys. Lett. 86, 062111 (2005)APPLAB000086000006062111000001.


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