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Applied Physics Letters / Volume 97 / Issue 9 / MAGNETISM AND SUPERCONDUCTIVITY

Appl. Phys. Lett. 97, 092502 (2010); http://dx.doi.org/10.1063/1.3476339 (3 pages)

Are Al2O3 and MgO tunnel barriers suitable for spin injection in graphene?

B. Dlubak1, P. Seneor1, A. Anane1, C. Barraud1, C. Deranlot1, D. Deneuve1, B. Servet2, R. Mattana1, F. Petroff1, and A. Fert1

1Unité Mixte de Physique CNRS/Thales, 91767 Palaiseau, France and University of Paris-Sud 11, 91405 Orsay, France
2Thales Research and Technology, 91767 Palaiseau, France

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(Received 11 March 2010; accepted 16 July 2010; published online 31 August 2010)

We report on the structural impact on graphene and multi-layers graphene of the growth by sputtering of tunnel barriers. Sputtered Al2O3 and MgO barriers were chosen for their well-known efficiency as spin injectors in spintronics devices. The impact of the growth on the structure of graphene and up to 4-layer flakes was analyzed by Raman spectroscopy. This study reveals that for Al2O3 growth, the impact is moderate for a monolayer and decreases sharply for bilayers and above. In the case of MgO all the flakes underwent a strong amorphization. Moreover, this reveals that while single layer graphene is believed to offer the best spin transport properties, the better robustness of multilayer graphene may ultimately make it a better choice for spintronics devices.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, amorphisation, fullerene devices, graphene, magnesium compounds, magnetoelectronics, multilayers, Raman spectra, spin polarised transport, sputter deposition

PACS

  • 68.65.Ac

    Multilayers

  • 78.35.+c

    Brillouin and Rayleigh scattering; other light scattering

  • 72.25.Mk

    Spin transport through interfaces

  • 78.67.Pt

    Multilayers; superlattices; photonic structures; metamaterials

  • 81.15.Cd

    Deposition by sputtering

  • 85.75.-d

    Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3476339

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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