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Applied Physics Letters / Volume 97 / Issue 9 / MAGNETISM AND SUPERCONDUCTIVITY

Appl. Phys. Lett. 97, 092503 (2010); http://dx.doi.org/10.1063/1.3484147 (3 pages)

Strain engineering to control the magnetic and magnetotransport properties of La0.67Sr0.33MnO3 thin films

F. Yang1, N. Kemik1, M. D. Biegalski2, H. M. Christen2, E. Arenholz3, and Y. Takamura1

1Department of Chemical Engineering and Materials Science, University of California–Davis, Davis, California 95616, USA
2Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
3Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

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(Received 3 June 2010; accepted 10 August 2010; published online 31 August 2010)

Strain engineering can be used to tailor the magnetic and magnetotransport properties of La0.67Sr0.33MnO3 thin films by varying the tetragonal distortion (c/a ratio) between a compressive strain of 1.005 and a tensile strain of 0.962 through the choice of the substrate type and the presence of a buffer layer. We find that increasing the tensile tetragonal distortion of the La0.67Sr0.33MnO3 thin film decreases the saturation magnetization, changes the temperature dependence of the resistivity and magnetoresistance, and increases the resistivity by several orders of magnitude.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

buffer layers, colossal magnetoresistance, lanthanum compounds, magnetic thin films, magnetisation reversal, strontium compounds

PACS

  • 75.47.Gk

    Colossal magnetoresistance

  • 75.60.Jk

    Magnetization reversal mechanisms

  • 75.70.Ak

    Magnetic properties of monolayers and thin films

  • 75.47.Lx

    Magnetic oxides

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3484147

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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