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Appl. Phys. Lett. 97, 092508 (2010); http://dx.doi.org/10.1063/1.3484278 (3 pages)

Epitaxial growth and magnetic properties of Fe3O4 films on TiN buffered Si(001), Si(110), and Si(111) substrates

Hua Xiang1, Fengyuan Shi1, Mark S. Rzchowski2, Paul M. Voyles1, and Y. Austin Chang1

1Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
2Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

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(Received 25 May 2010; accepted 7 August 2010; published online 2 September 2010)

Epitaxial Fe3O4 thin films were grown on TiN buffered Si(001), Si(110), and Si(111) substrates by dc reactive sputtering deposition. Both Fe3O4 films and TiN buffer are fully epitaxial when grown at substrate temperatures above 150 °C, with textured single phase Fe3O4 resulting from room temperature growth. The initial sputtered Fe3O4 formed nuclei islands and then coalesced to epitaxial columnar grains with increasing film thickness. The magnetization decreases and the coercive field increases with decreasing film thickness. There is no in-plane magnetic anisotropy of epitaxial Fe3O4(001) on Si(001) but Fe3O4 films grown on Si(110) and Si(111) substrates show uniaxial in-plane magnetic anisotropy.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 81.15.Cd

    Deposition by sputtering

  • 68.55.at

    Other materials

  • 75.70.Ak

    Magnetic properties of monolayers and thin films

  • 81.15.Kk

    Vapor phase epitaxy; growth from vapor phase

  • 75.30.Gw

    Magnetic anisotropy

  • 75.60.Ej

    Magnetization curves, hysteresis, Barkhausen and related effects

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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