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Applied Physics Letters / Volume 97 / Issue 9 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 97, 092901 (2010); http://dx.doi.org/10.1063/1.3463470 (3 pages)

Actual information storage with a recording density of 4 Tbit/in.2 in a ferroelectric recording medium

Kenkou Tanaka and Yasuo Cho

Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira Aoba-ku, Sendai 980-8577, Japan

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(Received 26 February 2010; accepted 23 May 2010; published online 30 August 2010)

A new method to achieve real information recording with a density above 1 Tbit/in.2 in ferroelectric data storage systems is proposed. In this system, data bits were written in the form of the polarization direction, and the data were read by scanning nonlinear dielectric microscopy technique. The domain-switching characteristics of the virgin and inversely prepolarized media were compared, and the conditions of the pulse voltage for writing were optimized. As a result, actual data containing 64×64 bits were recorded at an areal density of 4 Tbit/in.2. The bit error rate was evaluated to be 1.2×10−2.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

data recording, error statistics, ferroelectric storage, information storage

PACS

  • 85.50.Gk

    Non-volatile ferroelectric memories

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3463470

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    P. Paruch, T. Tybell, and J. -M. Triscone, Appl. Phys. Lett. 79, 530 (2001)APPLAB000079000004000530000001.

    K. Matsuura, Y. Cho, and R. Ramesh, Appl. Phys. Lett. 83, 2650 (2003)APPLAB000083000013002650000001.

    Y. Cho, A. Kirihara, and T. Saeki, Rev. Sci. Instrum. 67, 2297 (1996)RSINAK000067000006002297000001.

    Y. Cho, S. Kazuta, and K. Matsuura, Appl. Phys. Lett. 75, 2833 (1999)APPLAB000075000018002833000001.

    S. Choudhury, Y. Li, N. Odagawa, A. Vasudevarao, L. Tian, P. Capek, V. Dierolf, A. Morozovska, E. A. Eliseev, S. Kalinin, Y. Cho, L. Chen, and V. Gopalan, J. Appl. Phys. 104, 084107 (2008)JAPIAU000104000008084107000001.


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