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Applied Physics Letters / Volume 97 / Issue 9 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 97, 092904 (2010); http://dx.doi.org/10.1063/1.3481377 (3 pages)

Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy

Tae Joo Park1, Prasanna Sivasubramani1, Brian E. Coss1, Hyun-Chul Kim1, Bongki Lee1, Robert M. Wallace1, Jiyoung Kim1, Mike Rousseau2, Xinye Liu2, Huazhi Li2, Jean-Sebastien Lehn2, Daewon Hong2, and Deo Shenai2

1Department of Materials Science and Engineering, University of Texas at Dallas, Texas 75080, USA
2Dow Electronic Materials, The Dow Chemical Company, North Andover, Massachusetts 01845, USA

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(Received 14 May 2010; accepted 29 July 2010; published online 1 September 2010)

The effect of H2O and O3 oxidants on the behavior of residual C and N-related impurities as well as Si out-diffusion and interfacial layer formation in atomic-layer-deposited La2O3 films grown at 250 °C were examined using in situ x-ray photoelectron spectroscopy. The silicate formation was suppressed in a La2O3 film grown using O3 compared to that deposited using H2O, but interfacial layer growth was enhanced. The accumulation of C and N-related residues with low binding energy, which originated from incomplete reactions, was suppressed in La2O3 films grown using O3. However, the use of O3 resulted in La-carbonate phase in film.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

atomic layer deposition, binding energy, diffusion, lanthanum compounds, oxidation, thin films, X-ray photoelectron spectra

PACS

  • 81.65.Mq

    Oxidation

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 68.55.A-

    Nucleation and growth

  • 66.30.-h

    Diffusion in solids

  • 82.80.Pv

    Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3481377

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. Copel, E. Cartier, and F. M. Ross, Appl. Phys. Lett. 78, 1607 (2001)APPLAB000078000011001607000001.

    M. Cho, D. S. Jeong, J. Park, H. B. Park, S. W. Lee, T. J. Park, C. S. Hwang, G. H. Jang, and J. Jeong, Appl. Phys. Lett. 85, 5953 (2004)APPLAB000085000024005953000001.

    M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 93, 202902 (2008)APPLAB000093000020202902000001.

    Y. Wang, M. Dai, M. -T. Ho, L. S. Wielunski, and Y. J. Chabal, Appl. Phys. Lett. 90, 022906 (2007)APPLAB000090000002022906000001.

    X. L. Li, W. F. Xiang, H. B. Lu, and Z. H. Mai, J. Appl. Phys. 97, 124104 (2005)JAPIAU000097000012124104000001.

    M. Cho, H. B. Park, J. Park, S. W. Lee, C. S. Hwang, G. H. Jang, and J. Jeong, Appl. Phys. Lett. 83, 5503 (2003)APPLAB000083000026005503000001.

    B. S. Lim, A. Rahtu, P. de Rouffignac, and R. G. Gordon, Appl. Phys. Lett. 84, 3957 (2004)APPLAB000084000020003957000001.


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