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Applied Physics Letters / Volume 97 / Issue 9 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 093102 (2010); http://dx.doi.org/10.1063/1.3483164 (3 pages)

One-dimensional Si-in-Si(001) template for single-atom wire growth

J. H. G. Owen1, F. Bianco1, S. A. Köster1, D. Mazur1, D. R. Bowler2, and Ch. Renner1

1Department of Condensed Matter Physics, NCCR MaNEP, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland
2Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United Kingdom and London Centre for Nanotechnology, 17-19 Gordon Street, London WC1H 0AH, United Kingdom

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(Received 17 June 2010; accepted 5 August 2010; published online 30 August 2010)

Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We present atomic-resolution scanning tunneling microscope data of a silicon-only template, which modeling predicts to enable the self-organized growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one-dimensional, defect-free Si reconstruction four dimers wide—the Haiku core—formed by hydrogenation of self-assembled Bi-nanolines on Si(001) terraces, independent of any step edges. We discuss the potential of this Si-in-Si template as an appealing alternative to vicinal surfaces for nanoscale patterning.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

hydrogenation, nanopatterning, nanowires, scanning tunnelling microscopy, self-assembly, silicon

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3483164

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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