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Appl. Phys. Lett. 97, 093104 (2010); http://dx.doi.org/10.1063/1.3483758 (3 pages)

Raman scattering on intrinsic surface electron accumulation of InN nanowires

K. Jeganathan1, V. Purushothaman1, R. K. Debnath2, R. Calarco3, and H. Luth3

1Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, India
2Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, Ontario M5S 3G4, Canada
3Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH, D-52425 Jülich, Germany

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(Received 18 May 2010; accepted 1 August 2010; published online 1 September 2010)

An intrinsic property of vertically aligned InN nanowire (NW) ensembles have been investigated by analysis of coupled longitudinal optical (LO) phonon mode using μ-Raman scattering. Spectra were recorded in backscattering geometries in parallel and perpendicular to the axis of the NWs. The width of surface accumulation layer is estimated from the LO phonon peak intensity ratios. The carrier concentration is extracted to be 6.7×1016 cm−3. The pronounced peak at 627.2 cm−1 is related to the interaction of phonons with surface electrons. The surface charge density, Nsc is calculated to be ∼ 2.55×1013 cm−2 which provides surface accumulation field strength of 5.5 Mv/cm.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 73.21.Hb

    Quantum wires

  • 81.05.Ea

    III-V semiconductors

  • 78.30.Fs

    III-V and II-VI semiconductors

  • 78.68.+m

    Optical properties of surfaces

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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