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Appl. Phys. Lett. 97, 093105 (2010); http://dx.doi.org/10.1063/1.3484956 (3 pages)

Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets

Daeha Joung1,2, A. Chunder1,3, Lei Zhai1,3, and Saiful I. Khondaker1,2,4

1Nanoscience Technology Center, University of Central Florida, Orlando, Florida 32826, USA
2Department of Physics, University of Central Florida, Orlando, Florida 32826, USA
3Department of Chemistry, University of Central Florida, Orlando, Florida 32826, USA
4School of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32826, USA

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(Received 10 June 2010; accepted 31 July 2010; published online 1 September 2010)

We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space charge limited with an exponential distribution of traps. We estimate an average trap density of 1.75×1016 cm−3. Quantitative information about charge traps will help develop optimization strategies of passivating defects in order to fabricate high quality solution processed graphene devices.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 77.22.Jp

    Dielectric breakdown and space-charge effects

  • 82.45.-h

    Electrochemistry and electrophoresis

  • 61.46.Df

    Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

  • 81.65.Rv

    Passivation

  • 72.80.Vp

    Electronic transport in graphene

  • 61.48.Gh

    Structure of graphene

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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