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Applied Physics Letters / Volume 97 / Issue 9 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 97, 093107 (2010); http://dx.doi.org/10.1063/1.3480610 (3 pages)

Growth of monolayer graphene on 8° off-axis 4H–SiC (000–1) substrates with application to quantum transport devices

N. Camara1,2, B. Jouault2, A. Caboni1, B. Jabakhanji2, W. Desrat2, E. Pausas1, C. Consejo2, N. Mestres3, P. Godignon1, and J. Camassel2

1CNM-IMB-CSIC, Campus UAB, Bellaterra, 08193 Barcelona, Spain
2GES, UMR 5650, Université Montpellier 2/CNRS, 34095 Montpellier Cedex 5, France
3ICMAB-CSIC, Campus UAB, Bellaterra, 08193 Barcelona, Spain

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(Received 19 April 2010; accepted 23 July 2010; published online 1 September 2010)

Using high temperature annealing conditions with a graphite cap covering the C-face of an 8° off-axis 4H–SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magnetotransport measurements. We find a moderate p-type doping, high carrier mobility, and half integer quantum Hall effect typical of high quality graphene samples. This opens the way to a fully compatible integration of graphene with SiC devices on the wafers that constitute the standard in today’s SiC industry.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, elemental semiconductors, graphene, hole mobility, monolayers, quantum Hall effect, Raman spectra, semiconductor epitaxial layers, semiconductor growth, vacuum deposition, vapour phase epitaxial growth

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3480610

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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