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Applied Physics Letters / Volume 97 / Issue 9 / NANOSCALE SCIENCE AND DESIGN
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Appl. Phys. Lett. 97, 093110 (2010); http://dx.doi.org/10.1063/1.3488001 (3 pages)

Disordered antireflective nanostructures on GaN-based light-emitting diodes using Ag nanoparticles for improved light extraction efficiency

Young Min Song1, Eun Sil Choi2, Gyeong Cheol Park1, Chang Young Park1, Sung Jun Jang1, and Yong Tak Lee1,2,3

1Department of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea
2Graduate Program of Photonics and Applied Physics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea
3Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea

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(Received 10 July 2010; accepted 19 August 2010; published online 3 September 2010)

In this study, we demonstrate GaN light-emitting diodes (LEDs) with antireflective subwavelength structures (SWS) for enhanced light extraction efficiency. To eliminate the internal Fresnel reflection, SWS were fabricated on an indium-tin-oxide (ITO) surface using an overall dry etch process of Ag nanoparticles. The average size of the Ag nanoparticles was carefully chosen by theoretical calculation of the reflective diffraction efficiency using a rigorous coupled-wave analysis (RCWA) method. Improvement in light output power of ∼ 30.2% was achieved for the fabricated ITO SWS LEDs compared to conventional LEDs, with no significant increase in the forward voltage.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

etching, Fresnel diffraction, gallium compounds, III-V semiconductors, light emitting diodes, nanoelectronics, nanoparticles, silver, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3488001

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
Schematic illustrations of fabrication procedures for disordered antireflective nanostructures on GaN-based light-emitting diodes.

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FIG.2
Contour map of reflectance variations of ITO SWS on GaN substrate as a function of period and wavelength.

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FIG.3
(a) SEM images of Ag thin films on SiO2/ITO/GaN/sapphire annealed (i) as deposited (30 nm) and annealed at 500 °C for 1 min with thickness of (ii) 5 nm, (iii) 10 nm, (iv) 15 nm, (v) 20 nm, and (vi) 30 nm, respectively. Scale bar corresponds to 1 μm. (b) Average diameter of Ag nanoparticles with different deposited film thickness.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
(a) Top view of microscope image of the fabricated SWS integrated GaN light-emitting diode (left) and tilted angle view of SEM images of the fabricated ITO SWS. (b) Light-output power of conventional and SWS integrated top emitting InGaN LEDs, as a function of injection current. Inset shows light illumination images of conventional and SWS integrated InGaN LEDs at a injection current of 5 mA.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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