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Applied Physics Letters / Volume 97 / Issue 9 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 97, 093301 (2010); http://dx.doi.org/10.1063/1.3486180 (3 pages)

Effects of gate electrode work function on electrical characteristics of pentacene-based field-effect devices

Jaehoon Park1, Hey Min Kim2, Dong Wook Kim1, and Jong Sun Choi1

1Department of Electrical, Information and Control Engineering, Hongik University, 72-1 Sangsu-dong, Mapo-gu, Seoul 121-791, Republic of Korea
2LG Components R&D Center, Sa-dong, Sangnok-gu, Ansan, Gyeonggi-do 425-791, Republic of Korea

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(Received 2 August 2010; accepted 16 August 2010; published online 1 September 2010)

This paper presents the effects of the work function of an indium tin oxide (ITO) gate electrode on the electrical characteristics of two pentacene-based field-effect devices—metal-insulator-semiconductor (MIS) capacitors and field-effect transistors (FETs). The ITO work function was varied by employing base and acid treatments. Flat-band voltage shifts of the MIS capacitors were found to result from the shift in the work function. The current onset and threshold voltage of the FETs were also found to be influenced by the work function. These results demonstrate the correlation of the flat-band conditions of pentacene-based field-effect devices with the gate electrode work function.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, MIS capacitors, organic field effect transistors, organic semiconductors, tin compounds, work function

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3486180

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
UPS spectra (He I, 21.2 eV) of ITO films without and with acidic and basic aqueous treatments.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
Plots of (C/Ci)−2 vs V for MIS capacitors with different ITO electrodes. The inset shows the schematic illustration of the fabricated MIS capacitor.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(a) Schematic of pentacene-based FET. (b) log10|ID| vs VG and (b) sqrt|ID| vs VG characteristics of pentacene-based FETs with different ITO gate electrodes.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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