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Applied Physics Letters / Volume 97 / Issue 9 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 97, 093303 (2010); http://dx.doi.org/10.1063/1.3486166 (3 pages)

Charge injection barrier and interface dipole formation in pentacene/semimetal heterostructures

Richard C. Hatch1, Casey W. Sanchez2, and Hartmut Höchst1

1Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Dr. Stoughton, Wisconsin 53589, USA
2Department of Physics, California State University, Fullerton, P.O. Box 6866, Fullerton, California 92843, USA

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(Received 8 June 2010; accepted 15 August 2010; published online 3 September 2010)

Heterostructures containing pentacene (Pn) and the semimetals Bi and Sb were grown using molecular beam epitaxy. We used photoemission spectroscopy to measure the evolution of the vacuum level, hole-injection barrier, interface dipole, and work function changes as a function of Pn and semimetal coverage. The energy levels of the semimetal/Pn/semimetal sandwich structures show symmetric final values. The Pn/semimetal interfaces are very abrupt and established after a single monolayer ( ∼ 15 Å), whereas the semimetal/Pn interfaces extend over ∼ 100 Å.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

antimony, bismuth, charge injection, molecular beam epitaxial growth, organic semiconductors, photoelectron spectra, sandwich structures, semiconductor-metal boundaries, work function

PACS

  • 73.40.Ns

    Metal-nonmetal contacts

  • 81.05.Fb

    Organic semiconductors

  • 79.60.Jv

    Interfaces; heterostructures; nanostructures

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3486166

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
VL shift, ΔVL, as determined from the SECs. The vertical line indicates the cutoff location for the Bi substrate determined by the commonly accepted linear extrapolation method.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
The change in VL (ΔVL) for Pn/Bi heterostructures (a) and Pn/Sb heterostructures (b). The evolution of the VL displays exponential behavior with the corresponding fit shown in black. The Pn/semimetal interfaces are abrupt and develop in ∼ 10 Å as seen in (c), and contrast with the semimetal/Pn interfaces (d) which extend over ∼ 100 Å. The VLs of the semimetal overlayers very nearly reach those of the semimetal substrates.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
The HIB and ID of the Pn/Bi, /Sb, and /Si(111)-7×7 heterostructures vs the “metal” work function Φ. Also shown are the IDs and HIBs of other Pn/inorganic heterostructures (a) Ref. 20, (b) Ref. 6, (c) Ref. 25, (d) Ref. 5, (e) Ref. 26, (f) Ref. 18, and (g) Ref. 27. Both the HIBs and the IDs of the Pn/metal heterostructures have a linear dependence on Φ and can be fit (black lines) such that |SID|+|SHIB| = 1, where SID and SHIB are the slopes of the HIB and ID, respectively.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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