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Applied Physics Letters / Volume 97 / Issue 9 / DEVICE PHYSICS

Appl. Phys. Lett. 97, 093504 (2010); http://dx.doi.org/10.1063/1.3483769 (3 pages)

Low-frequency noise in diamond solution-gated field effect transistors

M. V. Hauf, L. H. Hess, J. Howgate, M. Dankerl, M. Stutzmann, and J. A. Garrido

Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany

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(Received 28 June 2010; accepted 7 August 2010; published online 2 September 2010)

Electronic noise is investigated in diamond solution-gated field effect transistors. They exhibit 1/f-type noise, which is evaluated according to Hooge’s empirical relation. Correcting for the contribution of access regions, the Hooge parameter is found to be inversely proportional to the carrier density, suggesting that the noise originates from fluctuations in the number of charge carriers. Trapping and detrapping of charge carriers at dislocations of the diamond crystal is considered the main source of noise. An effective gate voltage noise of 16 μV rms is observed, which is comparable to the noise of similar devices based on Si and GaN.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

1/f noise, carrier density, diamond, dislocations, elemental semiconductors, field effect transistors

PACS

  • 85.30.Tv

    Field effect devices

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 61.72.Bb

    Theories and models of crystal defects

  • 71.20.Mq

    Elemental semiconductors

  • 81.05.Cy

    Elemental semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3483769

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. I. Landstrass and K. V. Ravi, Appl. Phys. Lett. 55, 975 (1989)APPLAB000055000010000975000001.

    F. Maier, M. Riedel, B. Mantel, J. Ristein, and L. Ley, Phys. Rev. Lett. 85, 3472 (2000).

    J. A. Garrido, A. Härtl, S. Kuch, M. Stutzmann, O. A. Williams, and R. B. Jackmann, Appl. Phys. Lett. 86, 073504 (2005)APPLAB000086000007073504000001.

    G. Steinhoff, B. Baur, G. Wrobel, S. Ingebrandt, A. Offenhausser, A. Dadgar, A. Krost, M. Stutzmann, and M. Eickhoff, Appl. Phys. Lett. 86, 033901 (2005)APPLAB000086000003033901000001.


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