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Appl. Phys. Lett. 97, 093505 (2010); http://dx.doi.org/10.1063/1.3486460 (3 pages)

Reduction in high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping

S. B. Lee1, A. Kim1, J. S. Lee2, S. H. Chang1, H. K. Yoo1, T. W. Noh1, B. Kahng2, M.-J. Lee3, C. J. Kim3, and B. S. Kang4

1ReCFI, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
2Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
3Samsung Advanced Institute of Technology, Yongin, Gyeonggi-do 446-712, Republic of Korea
4Department of Applied Physics, Hanyang University, Ansan, Gyeonggi-do 426-791, Republic of Korea

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(Received 6 March 2010; accepted 14 August 2010; published online 3 September 2010)

The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that, during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce IR. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor doping, we could reduce IR in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease in Icomp by carrier doping could be a viable alternative for reducing IR in unipolar resistance switching.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 84.32.Tt

    Capacitors

  • 84.30.Sk

    Pulse and digital circuits

  • 85.40.Ry

    Impurity doping, diffusion and ion implantation technology

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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