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Appl. Phys. Lett. 97, 094101 (2010); http://dx.doi.org/10.1063/1.3484964 (3 pages)

PO2 dependant resistance switch effect in highly epitaxial (LaBa)Co2O5+δ thin films

Jian Liu1, Gregory Collins1, Ming Liu1,2,3, C. L. Chen1,4, Jiechao Jiang3, Efsftathios I. Meletis3, Qingyu Zhang3, and Chuang Dong3

1Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, USA
2Department of Material Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019, USA
3State Key Laboratory of Materials Modification Laboratory, Dalian University of Technology, Dalian 116024, People’s Republic of China
4Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, USA

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(Received 29 March 2010; accepted 30 June 2010; published online 1 September 2010)

Giant resistance switching behavior in mixed conductive (LaBa)Co2O5+δ epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99% was achieved in the films during a change of 4% H2/96% N2 to oxygen at temperature range of 400–780 °C. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of (LaBa)Co2O5+δ and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature.

© 2010 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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