APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 97 / Issue 9 / COMMENTS
FREE

FULL-TEXT OPTIONS:

Appl. Phys. Lett. 97, 096101 (2010); http://dx.doi.org/10.1063/1.3475395 (1 page)

Comment on “Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor” [ Appl. Phys. Lett. 91, 083513 (2007) ]

Yow-Jon Lin

Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan

View MapView Map

(Received 10 January 2010; accepted 11 July 2010; published online 30 August 2010)

Abstract unavailable.

EDITORIALLY RELATED

    Related Articles

  1. Response to “Comment on `Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor' ” [Appl. Phys. Lett. 97, 096101 (2010)]
    Arash Takshi et al.
    Appl. Phys. Lett. 97, 096102 (2010)APPLAB000097000009096102000001
  2. Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor
    Arash Takshi et al.
    Appl. Phys. Lett. 91, 083513 (2007)APPLAB000091000008083513000001

RELATED DATABASES

Web of Science

View this record in Web of Science

View Web of Science related articles

KEYWORDS and PACS

Keywords

localised states, organic field effect transistors, organic semiconductors, Schottky barriers, semiconductor-metal boundaries

PACS

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

  • 85.30.Tv

    Field effect devices

  • 73.40.Ns

    Metal-nonmetal contacts

  • 73.20.Fz

    Weak or Anderson localization

  • 71.23.An

    Theories and models; localized states

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3475395

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

  1. A. Takshi, A. Dimopoulos, and J. D. Madden, Appl. Phys. Lett. 91, 083513 (2007)APPLAB000091000008083513000001. [ISI]
  2. I. H. Campbell, T. W. Hagler, D. L. Smith, and J. P. Ferraris, Phys. Rev. Lett. 76, 1900 (1996). [MEDLINE]
  3. M. Matsumura, Y. Jinde, T. Akai, and T. Kimura, Jpn. J. Appl. Phys., Part 1 35, 5735 (1996). [Inspec]
  4. S. H. Kim, J. Jang, and J. Y. Lee, Appl. Phys. Lett. 89, 253501 (2006)APPLAB000089000025253501000001.
  5. C. Ganzorig, M. Sakomura, K. Ueda, and M. Fujihira, Appl. Phys. Lett. 89, 263501 (2006)APPLAB000089000026263501000001.


Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Comment on “Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor” [ Appl. Phys. Lett. 91, 083513 (2007) ]
  2. Spin-lattice coupling and helical-spin driven ferroelectric polarization in multiferroic CuFeO2
  3. Left handed material based on amorphous ferromagnetic microwires tunable by dc current
  4. PO2 dependant resistance switch effect in highly epitaxial (LaBa)Co2O5+δ thin films
  5. Calcium-enhanced exocytosis of gold nanoparticles
Go to AIP Home
Copyright © American Institute of Physics
close