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Applied Physics Letters / Volume 97 / Issue 9 / COMMENTS
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Appl. Phys. Lett. 97, 096102 (2010); http://dx.doi.org/10.1063/1.3475396 (1 page)

Response to “Comment on ‘Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor’ ” [ Appl. Phys. Lett. 97, 096101 (2010) ]

Arash Takshi1, Alexandros Dimopoulos2, and John D. Madden2

1Department of Civil and Environmental Engineering, University of Maryland, College Park, Maryland 20742, USA
2Department of Electrical and Computer Engineering and Advanced Materials, Process Engineering Laboratory, University of British Columbia (UBC), Vancouver, British Columbia V6T 1Z1, Canada

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(Received 18 April 2010; accepted 15 July 2010; published online 30 August 2010)

Abstract unavailable.

EDITORIALLY RELATED

    Related Articles

  1. Comment on “Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor” [Appl. Phys. Lett. 91, 083513 (2007)]
    Yow-Jon Lin
    Appl. Phys. Lett. 97, 096101 (2010)APPLAB000097000009096101000001
  2. Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor
    Arash Takshi et al.
    Appl. Phys. Lett. 91, 083513 (2007)APPLAB000091000008083513000001

RELATED DATABASES

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KEYWORDS and PACS

Keywords

ohmic contacts, Schottky barriers, Schottky gate field effect transistors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3475396

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

  1. Datasheet of Keithley-Model 6430 Sub-Femtoamp Remote SourceMeter Instrument (http://www.keithley.com/products/dcac/currentvoltage/lowcurrent/?path=6430/Documents#4).
  2. A. Takshi, A. Dimopoulos, and J. Madden, Appl. Phys. Lett. 91, 083513 (2007)APPLAB000091000008083513000001. [ISI]

Figures (click on thumbnails to view enlargements)

FIG.1
A table from Keithley 6430 datasheet which indicates the error in current measurement for 1 μA range.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
A picture of the metal box used for shielding the sample and eliminating the effect of light during I-V measurement.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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