APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 98 / Issue 1 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 98, 012105 (2011); http://dx.doi.org/10.1063/1.3536486 (3 pages)

Metal-insulator transition and electrically driven memristive characteristics of SmNiO3 thin films

Sieu D. Ha, Gulgun H. Aydogdu, and Shriram Ramanathan

School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachussets 02138, USA

View MapView Map

(Received 10 November 2010; accepted 19 December 2010; published online 4 January 2011)

The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 °C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction studies show that compressively strained single-phase SNO grows epitaxially on LAO while on Si, mixed oxide phases are observed. MIT is observed in resistance-temperature measurements in films grown on both substrates, with charge transport in-plane for LAO/SNO films and out-of-plane for Si/SNO films. Electrically driven memristive behavior is realized in LAO/SNO films, suggesting that SNO may be relevant for neuromorphic devices.

© 2011 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

compressive strength, epitaxial growth, epitaxial layers, metal-insulator transition, samarium compounds, sputter deposition, X-ray diffraction

PACS

  • 73.61.Ng

    Insulators

  • 68.60.Bs

    Mechanical and acoustical properties

  • 81.40.Lm

    Deformation, plasticity, and creep

  • 68.55.at

    Other materials

  • 81.15.Cd

    Deposition by sputtering

  • 71.30.+h

    Metal-insulator transitions and other electronic transitions

  • 72.60.+g

    Mixed conductivity and conductivity transitions

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3536486

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. L. García-Muñoz, J. Rodríguez-Carvajal, P. Lacorre, and J. B. Torrance, Phys. Rev. B 46, 4414 (1992).

    T. Driscoll, H. T. Kim, B. G. Chae, M. Di Ventra, and D. N. Basov, Appl. Phys. Lett. 95, 043503 (2009)APPLAB000095000004043503000001.

    A. Ambrosini and J. -F. Hamet, Appl. Phys. Lett. 82, 727 (2003)APPLAB000082000005000727000001.

    F. Conchon, A. Boulle, R. Guinebretiere, C. Girardot, S. Pignard, J. Kreisel, F. Weiss, E. Dooryhee, and J. -L. Hodeau, Appl. Phys. Lett. 91, 192110 (2007)APPLAB000091000019192110000001.

    A. Tiwari, C. Jin, and J. Narayan, Appl. Phys. Lett. 80, 4039 (2002)APPLAB000080000021004039000001.

    Z. B. Wang, M. G. Helander, M. T. Greiner, J. Qiu, and Z. H. Lu, Phys. Rev. B 80, 235325 (2009).

    K. Deng, J. Yang, and Q. Zhu, J. Chem. Phys. 118, 6868 (2003)JCPSA6000118000015006868000001.

    G. A. Sawatzky and J. W. Allen, Phys. Rev. Lett. 53, 2339 (1984).

    Z. Yang, C. Ko, and S. Ramanathan, J. Appl. Phys. 108, 073708 (2010)JAPIAU000108000007073708000001.


For access to citing articles, you need to log in.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Metal-insulator transition and electrically driven memristive characteristics of SmNiO3 thin films
  2. Erratum: “Investigation of the electrocaloric effect in a PbMg1/3Nb2/3O3–PbTiO3 relaxor thin film” [ Appl. Phys. Lett. 95, 182904 (2009) ]
  3. Erratum: “Amplifying magneto-optical photonic crystal” [ Appl. Phys. Lett. 97, 061116 (2010) ]
  4. Response to “Comment on ‘Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor’ ” [ Appl. Phys. Lett. 97, 096101 (2010) ]
  5. Comment on “Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor” [ Appl. Phys. Lett. 91, 083513 (2007) ]
Go to AIP Home
Copyright © American Institute of Physics
close