Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon

Sambri, A.; Gariglio, S.; Torres Pardo, A.; Triscone, J.-M.; Stéphan, O.; Reiner, J. W.; Ahn, C. H.

doi:doi:10.1063/1.3532110

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

Effects of Bi nonstoichiometry in (Bi_0.5+xNa)TiO₃ ceramics

Effects of Bi nonstoichiometry on (Bi0.5+xNa)TiO3 (BNT) ceramics were investigated at x = −1–+2 mol % of Bi0.5 covering Bi deficiency and excess. At all compositions, rhombohedrally symmetric BNT perovskite formed without secondary phases. Increasing x caused smaller grains. Higher piezoelectric coefficient (d33) but lower depolarization temperature (Td) occurred at Bi excess than at Bi deficiency and vice versa. Leakage current at room temperature decreased with decreasing x. Electrical conduc...

Energy dissipation in a dynamic nanoscale contact

The size of an atomic force microscope tip can vary rapidly during interaction with a surface but this is typically overlooked. Here, we treat the tip radius as a dynamic variable. Comparison with nanoscission of DNA molecules shows that the pressure in the nanoscale contact cannot increase without bound, rather the tip gradually blunts as the energy in the cantilever is increased. We develop a method to stabilize the tip and then reliably calculate the effective area of interaction and dissipa...

The structural and electrical properties of epitaxial Pb(Zr_0.2Ti_0.8)O₃ thin films grown on 2 in. (001) silicon wafers were investigated. Using x-ray diffraction, the lattice behavior of the heterostructure has been studied as a function of temperature, suggesting a 250 °C increase of the Pb(Zr_0.2Ti_0.8)O₃ ferroelectric-paraelectric transition temperature with respect to the bulk value. This significant enhancement of the critical temperature is understood in terms of a two-dimensional clamping effect.

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

epitaxial layers, ferroelectric thin films, ferroelectric transitions, lead compounds, molecular beam epitaxial growth, X-ray diffraction

PACS

77.55.hj

PZT
68.55.aj

Insulators
81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
77.80.B-

Phase transitions and Curie point

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3532110

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef

American Institute of Physics

For access to citing articles, you need to log in.

Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)