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Applied Physics Letters / Volume 98 / Issue 10 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 98, 103305 (2011); http://dx.doi.org/10.1063/1.3554381 (3 pages)

Thickness dependence of the MoO3 blocking layers on ZnO nanorod-inverted organic photovoltaic devices

Mingjun Wang1,2, Yuan Li1, Huihui Huang1,2, Eric D. Peterson1, Wanyi Nie1, Wei Zhou1, Wei Zeng2, Wenxiao Huang1, Guojia Fang2, Nanhai Sun2, Xingzhong Zhao2, and David L. Carroll1

1Department of Physics, Center for Nanotechnology and Molecular Materials, Wake Forest University, Winston-Salem, North Carolina 27109, USA
2Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education and Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan 430072, People’s Republic of China

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(Received 6 August 2010; accepted 20 January 2011; published online 10 March 2011)

Organic solar cells based on vertically aligned zinc oxide nanorod arrays (ZNR) in an inverted structure of indium tin oxide (ITO)/ZNR/poly(3-hexylthiophene): (6,6)-phenyl C61 butyric acid methyl ester(P3HT:PCBM)/MoO3/aluminum(Al) were studied. We found that the optimum MoO3 layer thickness condition of 20 nm, the MoO3 can effectively decrease the probability of bimolecular recombination either at the Al interface or within the active layer itself. For this optimum condition we get a power conversion efficiency of 2.15%, a short-circuit current density of 9.02 mA/cm2, an open-circuit voltage of 0.55V, and a fill factor of 0.44 under 100 mW/cm2 irradiation. Our investigations also show that the highly crystallized ZNR can create short and continuous pathways for electron transport and increase the contact area between the ZNR and the organic materials.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

conducting polymers, current density, II-VI semiconductors, molybdenum compounds, nanorods, photovoltaic cells, power conversion, short-circuit currents, solar cells, wide band gap semiconductors, zinc compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3554381

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (3) Tables (1)

Figures (click on thumbnails to view enlargements)

FIG.1
Schematic illustration of the fabrication process of ZNR based bulk heterojunction (BHJ) solar cells.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(a) The side view SEM images of the ZNRs grown by the hydrothermal method and (b) cross sectional views of the P3HT: PCBM-coated ZNRs.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(a) J-V curve of the ZNR based inverted solar cell with different MoO3 thickness and (b) the dependence of FF on a Rsh. (c) J-V curve of ZNR and ZnO film based inverted solar with 20 nm MoO3 layer. (d) The EQE of both the ZNR with different MoO3 thickness (ZNR devices) and ZnO film with 20 nm MoO3 layer devices (ZnO device).

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

Tables

Table I. The summary of device performance.

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