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7 Mar 2011

Volume 98, Issue 10, Articles (10xxxx)

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Appl. Phys. Lett. 98, 104101 (2011); http://dx.doi.org/10.1063/1.3560505 (3 pages)

Zhongchang Wang, Susumu Tsukimoto, Rong Sun, Mitsuhiro Saito, and Yuichi Ikuhara
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Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers

Jianliang Huang, Wenquan Ma, Yang Wei, Yanhua Zhang, Yongheng Huo, Kai Cui, and Lianghui Chen

Appl. Phys. Lett. 98, 103501 (2011); http://dx.doi.org/10.1063/1.3561777 (3 pages) | Cited 1 time

Online Publication Date: 8 March 2011

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We report a two-color quantum dot infrared photodetector (QDIP) using double tunneling barriers (DTBs) on one side of the InGaAs/AlGaAs dots. The two-color detection is achieved by changing the polarity of the applied bias voltages. In contrast, the same QDIP structure without the DTBs does not exhibit this detection wavelength tunability by switching the bias polarity. The two-color detection is ascribed to a different escape mechanism of electrons between positive and negative biases. The electrons escape out of the quantum well through resonant tunneling for a positive bias voltage while tunnel through a triangular barrier for a negative bias voltage.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator

Liwen Sang, Meiyong Liao, Yasuo Koide, and Masatomo Sumiya

Appl. Phys. Lett. 98, 103502 (2011); http://dx.doi.org/10.1063/1.3562326 (3 pages) | Cited 7 times

Online Publication Date: 8 March 2011

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The authors report on the high-performance metal-semiconductor-metal (MSM) photodetectors (PDs) fabricated on high-quality InGaN film by introducing a superwide bandgap calcium fluoride (CaF2) as the insulator. The dark current of the PDs with CaF2 is drastically reduced by six orders of magnitude compared with those without CaF2, resulting in an extremely high discrimination ratio larger than 106 between ultraviolet and visible light. The responsivity at 338 nm is as high as 10.4 A/W biased at 2 V, corresponding to a photocurrent gain around 40. The CaF2 layer behaves as an excellent insulator for the InGaN-based MSM-PDs in dark condition, while it allows the electron injection through the metal/semiconductor interface under ultraviolet illumination, contributing to the photocurrent gain without sacrificing the response time ( ∼ ms).
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Sx Metal-semiconductor-metal structures
73.50.Pz Photoconduction and photovoltaic effects
81.05.Ea III-V semiconductors

Self-powered, hybrid antenna-magnetoresistive sensor for magnetic field detection

R. Macedo, F. A. Cardoso, S. Cardoso, P. P. Freitas, J. Germano, and M. S. Piedade

Appl. Phys. Lett. 98, 103503 (2011); http://dx.doi.org/10.1063/1.3562340 (3 pages) | Cited 1 time

Online Publication Date: 8 March 2011

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A self-powered hybrid sensor integrating a resonant antenna with a magnetoresistive spin valve sensor was microfabricated. The device is activated by a radiofrequency (rf) external electromagnetic source. This hybrid sensor is capable of detecting dc and ac external magnetic fields in the thermal noise regime. For an excitation rf field of 17 dB m at 130 MHz, the sensitivity to a transverse magnetic field normalized by the current induced in the device was 812 V (T A)−1 for dc magnetic field detection and 918 V (T A)−1 for the ac field measurement.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
07.55.-w Magnetic instruments and components

Atomic-scale characterization of the CdS/CuInSe2 interface in thin-film solar cells

O. Cojocaru-Mirédin, P. Choi, R. Wuerz, and D. Raabe

Appl. Phys. Lett. 98, 103504 (2011); http://dx.doi.org/10.1063/1.3560308 (3 pages) | Cited 9 times

Online Publication Date: 8 March 2011

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Elemental mixing at the CdS/CuInSe2 interface of a thin-film solar cell was studied by means of atom probe tomography. A Cu-depleted and Cd-doped region ( ∼ 2 nm in width) was detected at the CuInSe2 surface, proving the existence of a buried p-n homojunction within the CuInSe2 absorber layer. Furthermore, CdS was found to infiltrate open pores existing in CuInSe2 during the chemical bath deposition. This could explain why chemical bath deposition of CdS leads to higher solar cell efficiencies compared to physical vapor deposition of CdS.
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88.40.jm Thin film III-V and II-VI based solar cells
88.40.jn Thin film Cu-based I-III-VI2 solar cells
88.40.hj Efficiency and performance of solar cells

Patterned magnetic traps for magnetophoretic assembly and actuation of microrotor pumps

T. Henighan, D. Giglio, A. Chen, G. Vieira, and R. Sooryakumar

Appl. Phys. Lett. 98, 103505 (2011); http://dx.doi.org/10.1063/1.3562037 (3 pages) | Cited 1 time

Online Publication Date: 9 March 2011

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We demonstrate a microscopic magnetic rotor pump for fluidic channels whose components are assembled in situ and powered by weak external magnetic fields (<150 Oe). A platform of patterned Permalloy microdisks and microcavities provided for the transport, trapping, and rotation of the superparamagnetic spherical microrotors. Parallel actuation of several rotors without direct physical link to external energy sources, tunable rotation speeds, and reversible drive torques offers significant advantages over macroscopic techniques to control flow within microfluidic devices. The effectiveness of trapping and transporting magnetic nanoparticles by the disks illustrate scalability to smaller, submicrometer sized devices.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
47.85.Np Fluidics
47.61.Fg Flows in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS)
07.10.Cm Micromechanical devices and systems

Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du

Appl. Phys. Lett. 98, 103506 (2011); http://dx.doi.org/10.1063/1.3563705 (3 pages) | Cited 14 times

Online Publication Date: 10 March 2011

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A Schottky type metal-semiconductor-metal solar-blind ultraviolet detector was fabricated on high quality wurtzite Mg0.55Zn0.45O epitaxial film. Photoresponse spectra show a responsivity peak of 22 mA/W under 130 V bias. A sharp cutoff was recognized at a wavelength of 270 nm, and a temporal response measurement indicates a fast decay time of less than 500 ns. A large internal gain was observed and interpreted by a reduced Schottky barrier height model, which fits well with the experimental data.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Sx Metal-semiconductor-metal structures
73.30.+y Surface double layers, Schottky barriers, and work functions

Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers

Yang Wei, Wenquan Ma, Jianliang Huang, Yanhua Zhang, Yongheng Huo, Kai Cui, Lianghui Chen, and Yanli Shi

Appl. Phys. Lett. 98, 103507 (2011); http://dx.doi.org/10.1063/1.3563709 (3 pages) | Cited 2 times

Online Publication Date: 10 March 2011

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We report a modified dots-in-a-well (DWELL) infrared photodetector by inserting some very thin GaAs or AlGaAs layers into the InAs dots. The photoluminescence (PL) measurements indicate that the modified DWELL structure with the insertion layers (ILs) of GaAs has a larger peak intensity and a narrower PL linewidth than that without the ILs. For the modified DWELL detector with AlGaAs ILs, the peak detection wavelength reaches very long infrared window of 14.1 μm. The peak detectivity D∗ is 1.1×108 cm Hz1/2/W at 77 K under normal incidence infrared irradiation.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.-z Semiconductor devices

Phase-controlling phononic crystal

N. Swinteck, J. -F. Robillard, S. Bringuier, J. Bucay, K. Muralidharan, J. O. Vasseur, K. Runge, and P. A. Deymier

Appl. Phys. Lett. 98, 103508 (2011); http://dx.doi.org/10.1063/1.3559599 (3 pages) | Cited 3 times

Online Publication Date: 10 March 2011

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We report on a phononic crystal (PC) consisting of a square array of cylindrical polyvinylchloride inclusions in air that can be used to control the relative phase of two incident acoustic waves with different incident angles. The phase shift between waves propagating through the crystal depends on the angle of incidence of the incoming waves and the PC length. The behavior of the PC is analyzed using the finite-difference-time-domain method. The band structure and equifrequency contours calculated via the plane wave expansion method show that the distinctive phase controlling properties are attributed to noncollinear wave and group velocity vectors in the PC as well as the degree of refraction.
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63.20.-e Phonons in crystal lattices
61.41.+e Polymers, elastomers, and plastics
02.70.Bf Finite-difference methods

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

Kwang Hwan Ji, Ji-In Kim, Hong Yoon Jung, Se Yeob Park, Rino Choi, Un Ki Kim, Cheol Seong Hwang, Daeseok Lee, Hyungsang Hwang, and Jae Kyeong Jeong

Appl. Phys. Lett. 98, 103509 (2011); http://dx.doi.org/10.1063/1.3564882 (3 pages) | Cited 26 times

Online Publication Date: 10 March 2011

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Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can cause a large negative shift (>7.1 V) in threshold voltage, something frequently attributed to the trapping of photoinduced hole carriers. This work demonstrates that the deterioration of threshold voltage by NBIS can be strongly suppressed by high-pressure annealing under 10 atm O2 ambient. This improvement occurred through a reduction in oxygen vacancy defects in the IGZO film, indicating that a photoinduced transition from VO to VO2+ was responsible for the NBIS-induced instability.
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85.30.Tv Field effect devices

Improvement of carrier ballisticity in junctionless nanowire transistors

Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi, Ran Yu, and Jean-Pierre Colinge

Appl. Phys. Lett. 98, 103510 (2011); http://dx.doi.org/10.1063/1.3559625 (3 pages) | Cited 3 times

Online Publication Date: 10 March 2011

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In this work we show that junctionless nanowire transistor (JNT) exhibits lower degree of ballisticity in subthreshold and higher ballisticity above threshold compare to conventional inversion-mode transistors, according to quantum mechanical simulations. The lower degradation of the ballisticity above threshold region gives the JNT near-ballistic transport performance and hence a high current drive. On the other hand, lower ballisticity in subthreshold region helps reducing the off-current and improves the subthreshold slope. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green’s function formalism in the uncoupled mode-space approach has been developed to extract the physical parameters of the devices.
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73.23.Ad Ballistic transport
73.22.-f Electronic structure of nanoscale materials and related systems
85.30.Tv Field effect devices

Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

Tuo-Hung Hou, Kuan-Liang Lin, Jiann Shieh, Jun-Hung Lin, Cheng-Tung Chou, and Yao-Jen Lee

Appl. Phys. Lett. 98, 103511 (2011); http://dx.doi.org/10.1063/1.3565239 (3 pages) | Cited 5 times

Online Publication Date: 10 March 2011

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Reduction in RESET current is crucial for future high-density resistive-switching memory. We have reported a unipolar-switching Ni/HfO2/Si structure with low RESET current of 50 μA and RESET power of 30 μW. In addition, a unique cycling evolution of RESET current across more than two orders of magnitude allows us to probe into the evolvement of filament morphology at nanoscale, using a simple yet quantitative model. Filament morphology was found to depend strongly on the charge-dissipation current proportional to the powers of SET voltage. Moreover, the formation of inactive semiconductive filaments plays an important role in the reduction in RESET current.
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84.30.Sk Pulse and digital circuits

Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors

Yudai Kamada, Shizuo Fujita, Mutsumi Kimura, Takahiro Hiramatsu, Tokiyoshi Matsuda, Mamoru Furuta, and Takashi Hirao

Appl. Phys. Lett. 98, 103512 (2011); http://dx.doi.org/10.1063/1.3557066 (3 pages)

Online Publication Date: 10 March 2011

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We investigated effects of chemical stoichiometry of ZnO channel, controlled by oxygen partial pressure during deposition, on bias instability for ZnO thin-film transistors. Parallel threshold voltage shifts were mainly enhanced under gate bias stresses due to charge trapping when O-rich ZnO was used for channel layer. On the contrary, negative threshold voltage shifts were observed under both gate and drain bias stresses when Zn-rich ZnO was used for channel layer. This degradation was enhanced regardless of the bias polarity and the direction, attributing to electrically activated trap generations.
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85.30.Tv Field effect devices

Interface traps responsible for negative bias temperature instability in a nitrided submicron metal-oxide-semiconductor field effect transistor

Yoshiki Yonamoto and Naotoshi Akamatsu

Appl. Phys. Lett. 98, 103513 (2011); http://dx.doi.org/10.1063/1.3559223 (3 pages) | Cited 2 times

Online Publication Date: 11 March 2011

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Traps responsible for negative bias temperature instability (NBTI) in a nitrided submicron n-type metal-oxide-semiconductor field effect transistor (nMOSFET) were investigated in an atomic scale. By spin dependent transport, we could observe interfacial Pb-centers distinguishably and show that NBTI occurs mainly through an increase in Pb1-center rather than Pb0-center. This can be explained in terms of the atomic bonding configuration between silicon, nitrogen, and hydrogen atoms.
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85.30.Tv Field effect devices
85.75.Hh Spin polarized field effect transistors

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

Shimeng Yu, Yi Wu, and H.-S. Philip Wong

Appl. Phys. Lett. 98, 103514 (2011); http://dx.doi.org/10.1063/1.3564883 (3 pages) | Cited 11 times

Online Publication Date: 11 March 2011

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HfOx/AlOx bilayer resistive switching devices were fabricated for the study of the switching dynamics of the metal oxide memory. An exponential voltage-time relationship was experimentally observed as follows: the programming pulse widths need for switching exponentially decreased with the increase in the programming pulse amplitudes. Two following programming schemes were proposed to modulate the high resistance state values: (1) exponentially increase the programming pulse width; (2) linearly increase the programming pulse amplitude. Although both of these schemes were effective to achieve the target resistance, the transient current response measurements suggest the second scheme consumes considerably less energy in the programming. A field-driven oxygen ions migration model was utilized to elucidate the above experimentally observed phenomenon.
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84.30.Sk Pulse and digital circuits

Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors

Shinhyuk Yang, Chi-Sun Hwang, Jeong-Ik Lee, Sung-Min Yoon, Min-Ki Ryu, Kyoung-Ik Cho, Sang-Hee Ko Park, Se-Hyun Kim, Chan-Eon Park, and Jin Jang

Appl. Phys. Lett. 98, 103515 (2011); http://dx.doi.org/10.1063/1.3551536 (3 pages) | Cited 6 times

Online Publication Date: 11 March 2011

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We have fabricated fully patterned transparent oxide/organic hybrid transistors on glass substrates that contain In-Ga-Zn-O as the active layer and a poly(4-vinyl phenol-comethyl methacrylate) copolymer as the dielectric layer. These devices exhibit a saturation mobility of 6.04 cm2/V s, a threshold voltage value of 3.53 V, a subthreshold slope of 360 mV/decade, and an on-off ratio of 1.0×109 at a maximum processing temperature of 200 °C. We found that the bias stability characteristics of the hybrid transistors are dependent on the ambient conditions, but can also be dramatically improved by applying a hydrophobic organic passivation layer to the gate insulator.
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85.30.Tv Field effect devices
85.60.Jb Light-emitting devices
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