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7 Mar 2011

Volume 98, Issue 10, Articles (10xxxx)

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Appl. Phys. Lett. 98, 104101 (2011); http://dx.doi.org/10.1063/1.3560505 (3 pages)

Zhongchang Wang, Susumu Tsukimoto, Rong Sun, Mitsuhiro Saito, and Yuichi Ikuhara
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Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures

Woong Choi, Sunkook Kim, Yong Wan Jin, Sang Yoon Lee, and Timothy D. Sands

Appl. Phys. Lett. 98, 102901 (2011); http://dx.doi.org/10.1063/1.3561751 (3 pages) | Cited 3 times

Online Publication Date: 7 March 2011

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We report a quantitative investigation on the capacitance-voltage (C-V) modeling of metal-ferroelectric-semiconductor epitaxial heterostructures based on a theoretical model. Within the carrier concentration between 1017 and 1021 cm−3, calculated C-V curves were consistent with measurements exhibiting from a significant asymmetry to a typical butterfly shape resembling that of a metal-ferroelectric-metal capacitor. The behavior of the C-V curves can be understood by the width of the depletion region and the extent of the depolarization field. These results suggest that quantitative understanding on the electrical behavior of oxide heterostructures is possible with C-V measurements with potentially important implications on their device applications.
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84.32.Tt Capacitors
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.50.Gk Non-volatile ferroelectric memories
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Growth rate induced monoclinic to tetragonal phase transition in epitaxial BiFeO3 (001) thin films

Huajun Liu, Ping Yang, Kui Yao, and John Wang

Appl. Phys. Lett. 98, 102902 (2011); http://dx.doi.org/10.1063/1.3561757 (3 pages) | Cited 7 times

Online Publication Date: 8 March 2011

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Epitaxial BiFeO3 thin films were deposited on SrRuO3 buffered SrTiO3 (001) substrates at different growth rates by varying the radio frequency sputtering power. With increasing growth rate, the crystal structure of BiFeO3 films develops from monoclinic lattice to a mixture phase of tetragonal lattice T1 with c/a ∼ 1.05 and giant tetragonal lattice T2 with c/a ∼ 1.23, finally to a single tetragonal phase T2, as shown by high resolution synchrotron x-ray diffraction reciprocal space mappings. The observed phase transitions, induced by film growth rate, offer an alternative strategy to manipulate crystalline phases in epitaxial ferroelectric thin films.
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68.55.-a Thin film structure and morphology
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.15.Cd Deposition by sputtering
68.55.A- Nucleation and growth
64.70.K- Solid-solid transitions
61.66.-f Structure of specific crystalline solids

Defects in low-k organosilicate glass and their response to processing as measured with electron-spin resonance

H. Ren, M. T. Nichols, G. Jiang, G. A. Antonelli, Y. Nishi, and J. L. Shohet

Appl. Phys. Lett. 98, 102903 (2011); http://dx.doi.org/10.1063/1.3562307 (3 pages) | Cited 3 times

Online Publication Date: 8 March 2011

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Defect concentrations in low-k organosilicate glass films deposited on high-resistivity silicon were measured with electron-spin resonance. Bulk dangling bonds were detected. Both plasma exposure and ultraviolet exposure were used. During argon electron cyclotron resonance plasma exposure, ion and photon bombardment increased the measured defect concentrations. Ultraviolet lamp exposure was also shown to increase the defect concentrations. Dielectric samples with various dielectric constants were examined showing that as the value of the dielectric constant was lowered, the defect concentrations were shown to increase significantly.
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71.55.Jv Disordered structures; amorphous and glassy solids
77.55.Bh Low-permittivity dielectric films
76.30.Lh Other ions and impurities
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
77.22.Ch Permittivity (dielectric function)

Stabilization of ambient sensitive atomic layer deposited lanthanum aluminates by annealing and in situ capping

J. Swerts, S. Gielis, G. Vereecke, A. Hardy, D. Dewulf, C. Adelmann, M. K. Van Bael, and S. Van Elshocht

Appl. Phys. Lett. 98, 102904 (2011); http://dx.doi.org/10.1063/1.3557501 (3 pages) | Cited 3 times

Online Publication Date: 8 March 2011

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We have studied the effect of air exposure on lanthanum aluminates (LaAlOx) deposited by atomic layer deposition. Fourier transform infrared spectroscopy and thermal desorption spectroscopy of as-deposited LaAlOx showed that H2O is absorbed during air exposure and that the amount of absorbed H2O increases with increasing La atomic percent. C was found to be incorporated already during deposition in the form of carbonates. H2O and CO2 are outgassed during postdeposition annealing in an inert atmosphere. After a 700 °C postdeposition anneal, the LaAlOx becomes resistant against H2O absorption due to film densification. Alternatively, in situ capping of the LaAlOx with a ∼ 2 nm thin Al2O3 film protects the LaAlOx against H2O absorption, but it also hinders the outgassing of the C contaminants during a postdeposition anneal.
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78.66.Nk Insulators
68.43.Nr Desorption kinetics
81.40.Gh Other heat and thermomechanical treatments
77.55.D- High-permittivity gate dielectric films
78.30.Hv Other nonmetallic inorganics
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Improved electrical properties of Pt/HfO2/Ge using in situ water vapor treatment and atomic layer deposition

In-Sung Park, Youngjae Choi, William T. Nichols, and Jinho Ahn

Appl. Phys. Lett. 98, 102905 (2011); http://dx.doi.org/10.1063/1.3562015 (3 pages) | Cited 3 times

Online Publication Date: 9 March 2011

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The effects of water vapor treatment (WVT) on a Ge substrate were investigated in order to understand the improved electrical properties of Pt/HfO2/Ge metal-oxide-semiconductor (MOS) capacitors. The WVT and HfO2 deposition were performed in situ using an atomic layer deposition technique to avoid air exposure. As a result, the WVT on cleaned Ge substrates reduced the native oxide effectively and enhanced the initial growth of the HfO2 film. The improved interface qualities with WVT enhanced Ge-based device performance through a smoother capacitance-voltage curve, less increase in the inversion capacitance, and lower density of interface states.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
81.65.-b Surface treatments
77.55.D- High-permittivity gate dielectric films
81.05.Cy Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Effect of humidity and thermal curing of polymer gate dielectrics on the electrical hysteresis of SnO2 nanowire field effect transistors

Sahngki Hong, Daeil Kim, Gyu-Tae Kim, and Jeong Sook Ha

Appl. Phys. Lett. 98, 102906 (2011); http://dx.doi.org/10.1063/1.3562950 (3 pages) | Cited 4 times

Online Publication Date: 10 March 2011

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Electrical properties of SnO2 nanowire (NW) field effect transistor (FET) with polyimide gate dielectrics, prepared by thermal curing of polyamic acid, were investigated. In particular, the effect of humidity and the thermal curing on the electrical hysteresis was systematically studied by taking Fourier-transform infrared spectra of polymer films. Slow polarization of hydroxyl groups/water molecules in the polymer film due to the insufficient curing and the absorbed water molecules under high humidity during the device fabrication was attributed to the hysteresis in the direction opposite to that observed in SnO2 NW FET with SiO2 gate dielectrics.
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85.30.Tv Field effect devices
81.07.Vb Quantum wires
81.07.Gf Nanowires
81.16.-c Methods of micro- and nanofabrication and processing

First-principles study of the critical thickness in asymmetric ferroelectric tunnel junctions

Meng-Qiu Cai, Yong Du, and Bo-Yun Huang

Appl. Phys. Lett. 98, 102907 (2011); http://dx.doi.org/10.1063/1.3551728 (3 pages) | Cited 1 time

Online Publication Date: 10 March 2011

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The absent critical thickness of fully relaxed asymmetric ferroelectric tunnel junctions is investigated by first-principles calculations. The results show that PbTiO3 thin film between Pt and SrRuO3 electrodes can still retain a significant and stable polarization down to thicknesses as small as 0.8 nm, quite unlike the case of symmetric ferroelectric tunnel junctions. We trace this surprising result to the generation of a large electric field by the charge transfer between the electrodes caused by their different electronic environments, which acts against the depolarization field and enhances the ferroelectricity, leading to the reduction, or even complete elimination, for the critical thickness.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Lf Composite materials
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
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