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7 Mar 2011

Volume 98, Issue 10, Articles (10xxxx)

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Appl. Phys. Lett. 98, 104101 (2011); http://dx.doi.org/10.1063/1.3560505 (3 pages)

Zhongchang Wang, Susumu Tsukimoto, Rong Sun, Mitsuhiro Saito, and Yuichi Ikuhara
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Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3 (Gd2O3) passivation” [ Appl. Phys. Lett. 98, 062108 (2011) ]

C. A. Lin, H. C. Chiu, T. H. Chiang, T. D. Lin, Y. H. Chang, W. H. Chang, Y. C. Chang, W.-E. Wang, J. Dekoster, T. Y. Hoffmann, M. Hong, and J. Kwo

Appl. Phys. Lett. 98, 109901 (2011); http://dx.doi.org/10.1063/1.3566014 (1 page)

Online Publication Date: 11 March 2011

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Abstract Unavailable
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99.10.Fg Publisher's note
81.65.Rv Passivation
73.20.-r Electron states at surfaces and interfaces
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