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Applied Physics Letters / Volume 98 / Issue 11 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 98, 113306 (2011); http://dx.doi.org/10.1063/1.3564903 (3 pages)

Improved electron injection in poly(9,9′-dioctylfluorene)- co-benzothiodiazole via cesium carbonate by means of coannealing

Yana Vaynzof1, Dinesh Kabra1, Lay Lay Chua2, and Richard H. Friend1,2

1Cavendish Laboratory, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
2Department of Physics, National University of Singapore, 117542 Singapore

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(Received 16 December 2010; accepted 14 February 2011; published online 17 March 2011)

We investigate the electron-injecting properties of a ZnO substrate modified by a thin layer of solution-processed Cs2CO3 into poly(9,9′-dioctylfluorene)-co-benzothiodiazole (F8BT). Ultraviolet photoemission spectroscopy studies reveal that in the case of coannealed F8BT/Cs2CO3 films, the Fermi level is pinned at the lowest unoccupied molecular orbital of the F8BT, indicating significant n-doping of the polymer. X-ray photoemission spectroscopy measurements reveal the presence of Cs2CO3 in the coannealed F8BT/Cs2CO3 films. I-V measurements in single carrier devices show a significant improvement in the electron injection of the coannealed F8BT/Cs2CO3, in agreement with the observed n-doping of the polymer upon coannealing.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, caesium compounds, Fermi level, II-VI semiconductors, organic semiconductors, polymers, semiconductor doping, semiconductor thin films, surface treatment, ultraviolet photoelectron spectra, wide band gap semiconductors, X-ray photoelectron spectra, zinc compounds

PACS

  • 81.05.Fb

    Organic semiconductors

  • 79.60.Bm

    Clean metal, semiconductor, and insulator surfaces

  • 73.61.Ph

    Polymers; organic compounds

  • 61.72.up

    Other materials

  • 61.72.Cc

    Kinetics of defect formation and annealing

  • 73.50.Dn

    Low-field transport and mobility; piezoresistance

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3564903

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
(a) UPS spectra of ZnO and F8BT/ZnO, (b) UPS spectra of Cs2CO3/ZnO and F8BT/Cs2CO3/ZnO preannealed samples, (c) UPS spectra of Cs2CO3/ZnO and F8BT/Cs2CO3/ZnO coannealed samples with corresponding HOMO edge positions below. Energy level diagrams are summarized on the right.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
Cs 3d, N 1s, C 1s, and S 2p XPS spectra of Cs2CO3/ZnO (diamond), F8BT/ZnO (square), F8BT/Cs2CO3/ZnO preannealed (triangle), and F8BT/Cs2CO3/ZnO coannealed (circle).

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Electron only injection current density as a function of applied voltage measured in F8BT/ZnO (diamond), F8BT/Cs2CO3/ZnO preannealed (triangle), and F8BT/Cs2CO3/ZnO coannealed (circle). Schematic drawing of each sample structure appears on the right. The chemical structures of F8BT and Cs2CO3 are depicted at the bottom.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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