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Applied Physics Letters / Volume 98 / Issue 12 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 98, 121101 (2011); http://dx.doi.org/10.1063/1.3570634 (3 pages)

Enhanced electron-hole plasma stimulated emission in optically pumped gallium nitride nanopillars

M.-H. Lo1,2, Y.-J. Cheng1,2, H.-C. Kuo2, and S.-C. Wang2

1Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
2Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

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(Received 9 September 2010; accepted 3 March 2011; published online 21 March 2011)

An enhanced stimulated emission was observed in optically pumped GaN nanopillars. The nanopillars were fabricated from an epitaxial wafer by patterned pillar etching followed by crystalline regrowth. Under optical excitation, a strong redshifted stimulated emission peak emerged from a broad spontaneous emission background. The emission is attributed to the electron-hole plasma gain at high carrier density. The emission slope efficiency was greatly enhanced by 20 times compared with a GaN substrate under the same pumping condition. The enhancement is attributed to the better photon and gain interaction from the multiple scattering of photons among nanopillars.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier density, etching, gallium compounds, III-V semiconductors, nanofabrication, nanostructured materials, optical pumping, photoluminescence, semiconductor growth, solid-state plasma, stimulated emission, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3570634

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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