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Appl. Phys. Lett. 98, 121102 (2011); http://dx.doi.org/10.1063/1.3569819 (3 pages)

High performance external cavity InAs/InP quantum dot lasers

P. Chen1, Q. Gong1, C. F. Cao1, S. G. Li1, Y. Wang1, Q. B. Liu1, L. Yue1, Y. G. Zhang1, S. L. Feng1, C. H. Ma2, and H. L. Wang2

1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People’s Republic of China
2Department of Physics, Shandong provincial Key Laboratory of Laser Polarization and Information Technology, Qufu Normal University, Qufu 273165, People’s Republic of China

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(Received 1 March 2011; accepted 3 March 2011; published online 21 March 2011)

We report on high performance InAs/InP quantum dot tunable external cavity lasers (ECLs) operating in continuous-wave mode at room temperature. A tuning range of 70 nm has been achieved, covering the wavelengths from 1563 to 1633 nm. The threshold current densities are lower than 1625 A/cm2 in the tuning range. More than 23 mW output power was obtained at lasing wavelength of 1594 nm with an external differential quantum efficiency of 10.3%. An even wider tuning range of 98 nm has been obtained from the ECL based on the QD laser lasing in a longer wavelength.

© 2011 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

  • 42.60.Da

    Resonators, cavities, amplifiers, arrays, and rings

  • 42.60.Fc

    Modulation, tuning, and mode locking

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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