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Appl. Phys. Lett. 98, 121106 (2011); http://dx.doi.org/10.1063/1.3570687 (3 pages)

Three color infrared detector using InAs/GaSb superlattices with unipolar barriers

N. Gautam, M. Naydenkov, S. Myers, A. V. Barve, E. Plis, T. Rotter, L. R. Dawson, and S. Krishna

Department of Electrical and Computer Engineering, Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA

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(Received 27 December 2010; accepted 7 March 2011; published online 23 March 2011)

We report on a three color heterojunction band gap engineered type-II InAs/GaSb strained-layer superlattice photodiode for short-wave infrared (SWIR), mid-wave infrared (MWIR), and long-wave infrared (LWIR) detection. The reported structure is a three contact device with nBn architecture for SWIR and MWIR and heterojunction PIbN architecture for LWIR detection. At 77 K, the cutoff wavelength for SWIR, MWIR, and LWIR regions are 3.0 μm, 4.7 μm, and 10.1 μm, respectively. The reported architecture can be used for simultaneous detection in the LWIR/MWIR and LWIR/SWIR bands as well as sequential detection in the MWIR/SWIR bands by switching the polarity of the applied bias.

© 2011 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

  • 85.60.Dw

    Photodiodes; phototransistors; photoresistors

  • 07.57.Kp

    Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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