Surface segregation effects of erbium in GaAs growth and their implications for optical devices containing ErAs nanostructures

Crook, Adam M.; Nair, Hari P.; Bank, Seth R.

doi:doi:10.1063/1.3565168

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Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs

We report the detection of terahertz frequency radiation using photoconductive antennas fabricated from Fe-doped InGaAs, grown by metal-organic chemical vapor deposition. Coherent photoconductive detection is demonstrated using femtosecond laser pulses centered at either an 800 or a 1550 nm wavelength. The InGaAs resistivity and the sensitivity of photoconductive detection are both found to depend on the Fe-doping level. We investigate a wide range of probe laser powers, finding a peak in detec...

Large optical Stark shifts in semiconductor quantum dots coupled to photonic crystal cavities

We demonstrate large cavity-enhanced optical Stark shifts for a single quantum dot (QD) coupled to a photonic crystal cavity. A maximum Stark shift of 20 GHz is observed for a QD detuned by 104 GHz from the cavity mode. These Stark shifts are attained with extremely low cavity field energies of only ten photons. The changes in the QD emission wavelength are monitored via nonresonant transfer between the QD and cavity mode. Experimental results are compared to theoretical predictions based on th...

We report on the integration of semimetallic ErAs nanoparticles with high optical quality GaAs-based semiconductors, grown by molecular beam epitaxy. Secondary ion mass spectrometry and photoluminescence measurements provide evidence of surface segregation and incorporation of erbium into layers grown with the erbium cell hot, despite the closed erbium source shutter. We establish the existence of a critical areal density of the surface erbium layer, below which the formation of ErAs precipitates is suppressed. Based upon these findings, we demonstrate a method for overgrowing ErAs nanoparticles with III-V layers of high optical quality, using subsurface ErAs nanoparticles as a sink to deplete the surface erbium concentration. This approach provides a path toward realizing optical devices based on plasmonic effects in an epitaxially-compatible semimetal/semiconductor system.

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KEYWORDS and PACS

Keywords

erbium compounds, gallium arsenide, III-V semiconductors, molecular beam epitaxial growth, nanofabrication, nanoparticles, photoluminescence, precipitation, secondary ion mass spectra, semiconductor epitaxial layers, semiconductor growth, surface segregation

PACS

81.05.Ea

III-V semiconductors
81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag

Semiconductors
68.35.Dv

Composition, segregation; defects and impurities
78.66.Fd

III-V semiconductors
81.16.-c

Methods of micro- and nanofabrication and processing

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http://dx.doi.org/10.1063/1.3565168

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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