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Applied Physics Letters / Volume 98 / Issue 12 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 98, 121112 (2011); http://dx.doi.org/10.1063/1.3570630 (3 pages)

Band structures and optical gain of strained GaAsxP1−x−yNy/GaP quantum wells

Yuan-Hui Zhu, Hong-Yu Yu, and Wei-Jun Fan

School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798

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(Received 21 January 2011; accepted 4 March 2011; published online 24 March 2011)

In the framework of effective mass Hamiltonian of semiconductor quantum well structures and band anticrossing model, we investigated the band structures of fully strained GaAsxP1−x−yNy/GaP quantum wells. The GaAsxP1−x−yNy could be widely modified to be direct-band gap or indirect-band gap by changing the mole fraction of As and N in the well layer. We found that an increase in the N mole fraction in the well layer increases the TE mode optical gain very slightly.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

effective mass, energy gap, gallium arsenide, III-V semiconductors, semiconductor quantum wells

PACS

  • 73.21.Fg

    Quantum wells

  • 71.18.+y

    Fermi surface: calculations and measurements; effective mass, g factor

  • 78.67.De

    Quantum wells

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3570630

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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