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Appl. Phys. Lett. 98, 121113 (2011); http://dx.doi.org/10.1063/1.3570642 (3 pages)

Electroluminescence from a suspended tip-synthesized nano ZnO dot

Jun Hyun Han1, Norimasa Yoshimizu2, Cheng Jiang1, Amit Lal2, and Chung Hoon Lee1

1Nanoscale Devices Laboratory, Department of Electrical and Computer Engineering, Marquette University, Milwaukee, Wisconsin 53201, USA
2SonicMEMS Laboratory, School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

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(Received 4 February 2011; accepted 3 March 2011; published online 24 March 2011)

Electroluminescence (EL) from a laterally suspended nano ZnO dot (LSNZD) integrated between two microfabricated atomically sharp probe-tips is presented. When driven by 1 μA of bias current, the LSNZD emitted light, which was easily observed by the naked eye at room temperature. The minimum number of photons emitted per a second from the LSNZD was ∼ 9000/s at 100 nA of current, when driven by 12.5 V. The light emission mechanism and electrical characteristics of the LSNZD are explained with a metal-semiconductor-metal model. An optical wavelength spectrum of the emitted light shows major bands of emitted photons between 580 and 750 nm, which indicates the electron transitions from defects in the ZnO band gap. The device fabrication is compatible with typical integrated circuit processes and is suitable for chip- scale optoelectronics.

© 2011 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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