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Applied Physics Letters / Volume 98 / Issue 12 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 98, 121115 (2011); http://dx.doi.org/10.1063/1.3571440 (3 pages)

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Yi-Keng Fu1, Ren-Hao Jiang1,2, Yu-Hsuan Lu1,3, Bo-Chun Chen1, Rong Xuan1,4, Yen-Hsiang Fang1, Chia-Feng Lin2, Yan-Kuin Su3, and Jenn-Fang Chen4

1Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan
2The Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan
3Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 70101, Taiwan
4Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan

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(Received 14 December 2010; accepted 6 March 2011; published online 24 March 2011)

The letter reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barrier (QB). The indium mole fraction of AlInGaN QB could be enhanced as we increased the trimethylgallium flow rate. It was found the AlInGaN/InGaN LEDs can reduce forward voltage and improve light output power, compared with conventional GaN QB. By using advanced device simulation, it should be attributed to a reduction in lattice mismatch induced polarization mismatch in the active layer, which results in the suppression of electron overflow.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, MOCVD, vapour phase epitaxial growth, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3571440

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, Appl. Phys. Lett. 95, 011116 (2009)APPLAB000095000001011116000001.


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