Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface

Sun, Xiaojuan; Li, Dabing; Jiang, Hong; Li, Zhiming; Song, Hang; Chen, Yiren; Miao, Guoqing

doi:doi:10.1063/1.3567943

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Angle and polarization independent narrow-band thermal emitter made of metallic disk on SiO₂

It is shown that the metallic disk structure can be used as an efficient narrow-band thermal emitter in the IR region. The absorption spectra of such structure are investigated both theoretically and experimentally. Calculations of thermal radiation properties of the metallic disk show that the metallic disk is a perfect emitter at a specific wavelength, which can be tuned by varying the diameter of the disk. The metallic disk exhibits only one significant localized surface plasmon polariton (L...

Guided Bloch surface wave polaritons

The authors report on a theoretical investigation of guided polariton states arising from the strong coupling between quantum-well excitons and a Bloch surface wave confined at the interface between a uniform dielectric medium and a Bragg mirror. It is shown that the exciton–photon coupling is almost doubled as compared to a similar structure made in a conventional planar microcavity. It is also shown that, by simple engineering of the sample surface with silicon oxide deposition, one can effic...

GaN metal-semiconductor-metal (MSM) ultraviolet detectors were investigated by depositing different density of SiO₂ nanoparticles (SNPs) on the GaN. It was shown that the dark current of the detectors with SNPs was more than one order of magnitude lower than that without SNPs and the peak responsivity was enhanced after deposition of the SNPs. Atomic force microscopy observations indicated that the SNPs usually formed at the termination of screw and mixed dislocations, and further current-voltage measurements showed that the leakage of the Schottky contact for the GaN MSM detector decreased with deposited the SNPs. Moreover, the leakage obeyed the Frenkel–Poole emission model, which meant that the mechanism for improving the performance is the SNPs passivation of the dislocations followed by the reduction in the dark current.

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KEYWORDS and PACS

Keywords

dark conductivity, dislocations, gallium compounds, metal-semiconductor-metal structures, nanoparticles, Poole-Frenkel effect, Schottky barriers, silicon compounds, ultraviolet detectors

PACS

73.40.Sx

Metal-semiconductor-metal structures
72.40.+w

Photoconduction and photovoltaic effects
72.20.Ht

High-field and nonlinear effects
73.30.+y

Surface double layers, Schottky barriers, and work functions
85.60.Gz

Photodetectors (including infrared and CCD detectors)

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3567943

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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