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Applied Physics Letters / Volume 98 / Issue 12 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 98, 121903 (2011); http://dx.doi.org/10.1063/1.3567549 (3 pages)

Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition

W. F. Yang1, L. M. Wong2, S. J. Wang2, H. D. Sun3, C. H. Ge4, Alex Y. S. Lee4, and H. Gong1

1Department of Materials Science and Engineering, National University of Singapore, Singapore 117576
2Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602
3Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
4Du Pont Apollo Limited, No. 8 Science Park West Ave., Hong Kong Science Park, Pak Shek Kok, New Territories, Hong Kong

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(Received 16 October 2010; accepted 25 February 2011; published online 21 March 2011)

Optical properties of ZnCdO/ZnO single quantum well (SQW) grown on c-sapphire substrate by pulsed laser deposition were investigated. Temperature dependent photoluminescence (PL) measurement was performed from 10 to 300 K to study the carrier localization effect and peak evolution. The LO-phonon replicas up to third order with Huang–Rhys factor of 0.17 were observed. The SQW exhibited very strong PL from the well layer and extremely weak emission from the ZnO barriers, indicating high quality interfaces and highly efficient relaxation.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

II-VI semiconductors, phonon-exciton interactions, photoluminescence, pulsed laser deposition, semiconductor growth, semiconductor quantum wells, wide band gap semiconductors, zinc compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3567549

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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$abstract.society.value is a Member of CrossRef American Institute of Physics

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