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Applied Physics Letters / Volume 98 / Issue 12 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 98, 123103 (2011); http://dx.doi.org/10.1063/1.3569142 (3 pages)

Few graphene layers/carbon nanotube composites grown at complementary-metal-oxide-semiconductor compatible temperature

V. Jousseaume1, J. Cuzzocrea1, N. Bernier1, and V. T. Renard1,2

1CEA-LETI-Minatec, 17 rue des Martyrs, 38054 Grenoble, France
2Institut Néel, CNRS and Université Joseph Fourier, BP 166, 38042 Grenoble cedex 9, France

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(Received 15 October 2010; accepted 2 March 2011; published online 21 March 2011)

We investigate the growth of the recently demonstrated composite material composed of vertically aligned carbon nanotubes capped by few graphene layers. We show that the carbon nanotubes grow epitaxially under the few graphene layers. By using a catalyst and gaseous carbon precursor different from those used originally we establish that such unconventional growth mode is not specific to a precise choice of catalyst–precursor couple. Furthermore, the composite can be grown using catalyst and temperatures compatible with complementary-metal-oxide-semiconductor processing (T<450 °C).

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

carbon nanotubes, catalysis, catalysts, graphene, nanocomposites, nanofabrication, vapour phase epitaxial growth

PACS

  • 81.07.-b

    Nanoscale materials and structures: fabrication and characterization

  • 81.16.Hc

    Catalytic methods

  • 82.65.+r

    Surface and interface chemistry; heterogeneous catalysis at surfaces

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3569142

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Z. Yao, C. L. Kane, and C. Dekker, Phys. Rev. Lett. 84, 2941 (2000).

    P. Kim, L. Shi, A. Majumdar, and P. L. McEuen, Phys. Rev. Lett. 87, 215502 (2001).

    P. Neugebauer, M. Orlita, C. Faugeras, A. -L. Barra, and M. Potemski, Phys. Rev. Lett. 103, 136403 (2009).

    Q. Yu, J. Lian, S. Siriponglert, H. Li, Y. P. Chen, and S. -S. Pei, Appl. Phys. Lett. 93, 113103 (2008)APPLAB000093000011113103000001.

    Z. F. Ren, Z. P. Huang, D. Z. Wang, and J. G. Wen, Appl. Phys. Lett. 75, 1086 (1999)APPLAB000075000008001086000001.


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