Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air

Adamopoulos, George; Thomas, Stuart; Bradley, Donal D. C.; McLachlan, Martyn A.; Anthopoulos, Thomas D.

doi:doi:10.1063/1.3568893

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We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y₂O₃ and amorphous Al₂O₃ dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y₂O₃ and Al₂O₃ dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm²/V s and current on/off ratio on the order of 10⁵. This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods.

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KEYWORDS and PACS

Keywords

aluminium compounds, atomic force microscopy, electron mobility, high-k dielectric thin films, II-VI semiconductors, leakage currents, semiconductor thin films, spray coating techniques, thin film transistors, ultraviolet spectra, visible spectra, wide band gap semiconductors, yttrium compounds, zinc compounds

PACS

85.30.Tv

Field effect devices
81.15.Rs

Spray coating techniques
68.55.aj

Insulators
78.66.Nk

Insulators
78.40.Ha

Other nonmetallic inorganics
77.55.dj

For nonsilicon electronics (Ge, III-V, II-VI, organic electronics)

ARTICLE DATA

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http://dx.doi.org/10.1063/1.3568893

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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